Correlating raman spectral signatures with carrier mobility in epitaxial graphene: A guide to achieving high mobility on the wafer scale

Joshua A. Robinson, Maxwell Wetherington, Joseph L. Tedesco, Paul M. Campbell, Xiaojun Weng, Joseph Stitt, Mark A. Fanton, Eric Frantz, David Snyder, Brenda L. VanMil, Glenn G. Jernigan, L. Myers Ward Rachael, Charles R. Eddy, D. Kurt Gaskill

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Abstract

We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on SiC(0001) is highly dependent on thickness and monolayer strain uniformity. Additionally, we achieve high mobility epitaxial graphene (18100 cm2/(V s) at room temperature) on SiC(0001) and show that carrier mobility depends strongly on the graphene layer stacking.

Original languageEnglish (US)
Pages (from-to)2873-2876
Number of pages4
JournalNano letters
Volume9
Issue number8
DOIs
StatePublished - Aug 12 2009

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All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Robinson, J. A., Wetherington, M., Tedesco, J. L., Campbell, P. M., Weng, X., Stitt, J., Fanton, M. A., Frantz, E., Snyder, D., VanMil, B. L., Jernigan, G. G., Rachael, L. M. W., Eddy, C. R., & Gaskill, D. K. (2009). Correlating raman spectral signatures with carrier mobility in epitaxial graphene: A guide to achieving high mobility on the wafer scale. Nano letters, 9(8), 2873-2876. https://doi.org/10.1021/nl901073g