Correlation between DC-RF dispersion and gate leakage in deeply recessed GaN/AlGaN/GaN HEMTs

Rongming Chu, Likum Shen, Nicholas Fichtenbaum, Zhen Chen, Stacia Keller, Steven P. DenBaars, Umesh K. Mishra

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Employing deeply recessed GaN/AlGaN/GaN highelectron mobility transistors, we experimentally demonstrate the correlation between the dc-RF dispersion and the gate leakage current. It was found that both the dc-RF dispersion and the gate leakage are strongly affected by surface charging. The impact of surface charging can be controlled by using GaN/AlGaN/GaN structures with varied GaN cap thickness. In the absence of field plates, the tradeoff between the dc-RF dispersion and the gate leakage can be compromised by choosing a proper GaN cap thickness. Our optimum epistructure design yields an output power density of 5.6 W/mm with an associated power added efficiency of 72% at 28-V bias and 4-GHz frequency. The gate leakage current is as low as 30 μ A/mm at up to 40-V gate-drain bias.

Original languageEnglish (US)
Pages (from-to)303-305
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number4
DOIs
StatePublished - Apr 1 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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