We report on observations of a correlation between the microstructure of organic thin films and their electronic properties when incorporated in field-effect transistors. We present a simple method to induce enhanced grain growth in solution-processed thin film transistors by chemical modification of the source-drain contacts. This leads to improved device performance and gives a unique thin film microstructure for fundamental studies concerning the effect of structural order on the charge transport. We demonstrate that the 1f flicker noise is sensitive to organic semiconductor thin film microstructure changes in the transistor channel.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)