Correlation between microstructure, electronic properties and flicker noise in organic thin film transistors

Oana D. Jurchescu, Behrang H. Hamadani, Hao D. Xiong, Sungkyu K. Park, Sankar Subramanian, Neil M. Zimmerman, John E. Anthony, Thomas N. Jackson, David J. Gundlach

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Abstract

We report on observations of a correlation between the microstructure of organic thin films and their electronic properties when incorporated in field-effect transistors. We present a simple method to induce enhanced grain growth in solution-processed thin film transistors by chemical modification of the source-drain contacts. This leads to improved device performance and gives a unique thin film microstructure for fundamental studies concerning the effect of structural order on the charge transport. We demonstrate that the 1f flicker noise is sensitive to organic semiconductor thin film microstructure changes in the transistor channel.

Original languageEnglish (US)
Article number132103
JournalApplied Physics Letters
Volume92
Issue number13
DOIs
StatePublished - Apr 10 2008

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Jurchescu, O. D., Hamadani, B. H., Xiong, H. D., Park, S. K., Subramanian, S., Zimmerman, N. M., Anthony, J. E., Jackson, T. N., & Gundlach, D. J. (2008). Correlation between microstructure, electronic properties and flicker noise in organic thin film transistors. Applied Physics Letters, 92(13), [132103]. https://doi.org/10.1063/1.2903508