Correlation of performance and hot carrier stress reliability of polycrystalline silicon thin film transistors with substrates and substrate coating

Research output: Contribution to journalConference article

Abstract

We report on the performance and hot carrier stress (HCS) reliability of n-channel poly-Si TFTs fabricated on bare or SiO2-coated low-alkali glass, or fused silica substrates. Low-pressure chemical vapor deposited (LPCVD) SiO2 films with different thicknesses are used as impurity diffusion barrier layers. We have found that the performance and HCS reliability of n-TFTs on the SiO2-coated glass are superior to those of n-TFTs on bare glass, and comparable to those of TFTs on fused silica. We also explore the impact of the SiO2 coating thickness on the performance and HCS reliability of the TFTs. The HCS reliability of the TFTs on SiO2-coated glass substrates is observed to depend on the SiO2 coating thickness. This is explained in terms of a phenomenological model which involves impurity and grain boundary traps.

Original languageEnglish (US)
Pages (from-to)91-96
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume508
StatePublished - Dec 1 1998
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 13 1998Apr 15 1998

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Hot carriers
Thin film transistors
Polysilicon
coating
transistors
Glass
Coatings
glass
silicon
Substrates
Fused silica
thin films
Impurities
silicon dioxide
coatings
impurities
Diffusion barriers
Alkalies
barrier layers
alkalies

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

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abstract = "We report on the performance and hot carrier stress (HCS) reliability of n-channel poly-Si TFTs fabricated on bare or SiO2-coated low-alkali glass, or fused silica substrates. Low-pressure chemical vapor deposited (LPCVD) SiO2 films with different thicknesses are used as impurity diffusion barrier layers. We have found that the performance and HCS reliability of n-TFTs on the SiO2-coated glass are superior to those of n-TFTs on bare glass, and comparable to those of TFTs on fused silica. We also explore the impact of the SiO2 coating thickness on the performance and HCS reliability of the TFTs. The HCS reliability of the TFTs on SiO2-coated glass substrates is observed to depend on the SiO2 coating thickness. This is explained in terms of a phenomenological model which involves impurity and grain boundary traps.",
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N2 - We report on the performance and hot carrier stress (HCS) reliability of n-channel poly-Si TFTs fabricated on bare or SiO2-coated low-alkali glass, or fused silica substrates. Low-pressure chemical vapor deposited (LPCVD) SiO2 films with different thicknesses are used as impurity diffusion barrier layers. We have found that the performance and HCS reliability of n-TFTs on the SiO2-coated glass are superior to those of n-TFTs on bare glass, and comparable to those of TFTs on fused silica. We also explore the impact of the SiO2 coating thickness on the performance and HCS reliability of the TFTs. The HCS reliability of the TFTs on SiO2-coated glass substrates is observed to depend on the SiO2 coating thickness. This is explained in terms of a phenomenological model which involves impurity and grain boundary traps.

AB - We report on the performance and hot carrier stress (HCS) reliability of n-channel poly-Si TFTs fabricated on bare or SiO2-coated low-alkali glass, or fused silica substrates. Low-pressure chemical vapor deposited (LPCVD) SiO2 films with different thicknesses are used as impurity diffusion barrier layers. We have found that the performance and HCS reliability of n-TFTs on the SiO2-coated glass are superior to those of n-TFTs on bare glass, and comparable to those of TFTs on fused silica. We also explore the impact of the SiO2 coating thickness on the performance and HCS reliability of the TFTs. The HCS reliability of the TFTs on SiO2-coated glass substrates is observed to depend on the SiO2 coating thickness. This is explained in terms of a phenomenological model which involves impurity and grain boundary traps.

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