Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3

M. D. Biegalski, D. D. Fong, J. A. Eastman, P. H. Fuoss, S. K. Streiffer, T. Heeg, J. Schubert, W. Tian, C. T. Nelson, X. Q. Pan, M. E. Hawley, M. Bernhagen, P. Reiche, R. Uecker, S. Trolier-Mckinstry, D. G. Schlom

Research output: Contribution to journalArticle

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Abstract

Strained epitaxial SrTiO3 films were grown on orthorhombic (101) DyScO3 substrates by reactive molecular-beam epitaxy. The epitaxy of this substrate/film combination is cube on cube with a pseudocubic out-of-plane (001) orientation. The strain state and structural perfection of films with thicknesses ranging from 50 to 1000 Å were examined using x-ray scattering. The critical thickness at which misfit dislocations was introduced was between 350 and 500 Å. These films have the narrowest rocking curves (full width at half maximum) ever reported for any heteroepitaxial oxide film (0.0018°). Only a modest amount of relaxation is seen in films exceeding the critical thicknesses even after postdeposition annealing at 700 °C in 1 atm of oxygen. The dependence of strain relaxation on crystallographic direction is attributed to the anisotropy of the substrate. These SrTiO3 films show structural quality more typical of semiconductors such as GaAs and silicon than perovskite materials; their structural relaxation behavior also shows similarity to that of compound semiconductor films.

Original languageEnglish (US)
Article number114109
JournalJournal of Applied Physics
Volume104
Issue number11
DOIs
StatePublished - Dec 1 2008

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x ray scattering
epitaxy
oxide films
molecular beam epitaxy
anisotropy
annealing
silicon
oxygen
curves

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Biegalski, M. D., Fong, D. D., Eastman, J. A., Fuoss, P. H., Streiffer, S. K., Heeg, T., ... Schlom, D. G. (2008). Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3. Journal of Applied Physics, 104(11), [114109]. https://doi.org/10.1063/1.3037216
Biegalski, M. D. ; Fong, D. D. ; Eastman, J. A. ; Fuoss, P. H. ; Streiffer, S. K. ; Heeg, T. ; Schubert, J. ; Tian, W. ; Nelson, C. T. ; Pan, X. Q. ; Hawley, M. E. ; Bernhagen, M. ; Reiche, P. ; Uecker, R. ; Trolier-Mckinstry, S. ; Schlom, D. G. / Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3. In: Journal of Applied Physics. 2008 ; Vol. 104, No. 11.
@article{5f6abcb14efd4a91824dc8bd3829a210,
title = "Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3",
abstract = "Strained epitaxial SrTiO3 films were grown on orthorhombic (101) DyScO3 substrates by reactive molecular-beam epitaxy. The epitaxy of this substrate/film combination is cube on cube with a pseudocubic out-of-plane (001) orientation. The strain state and structural perfection of films with thicknesses ranging from 50 to 1000 {\AA} were examined using x-ray scattering. The critical thickness at which misfit dislocations was introduced was between 350 and 500 {\AA}. These films have the narrowest rocking curves (full width at half maximum) ever reported for any heteroepitaxial oxide film (0.0018°). Only a modest amount of relaxation is seen in films exceeding the critical thicknesses even after postdeposition annealing at 700 °C in 1 atm of oxygen. The dependence of strain relaxation on crystallographic direction is attributed to the anisotropy of the substrate. These SrTiO3 films show structural quality more typical of semiconductors such as GaAs and silicon than perovskite materials; their structural relaxation behavior also shows similarity to that of compound semiconductor films.",
author = "Biegalski, {M. D.} and Fong, {D. D.} and Eastman, {J. A.} and Fuoss, {P. H.} and Streiffer, {S. K.} and T. Heeg and J. Schubert and W. Tian and Nelson, {C. T.} and Pan, {X. Q.} and Hawley, {M. E.} and M. Bernhagen and P. Reiche and R. Uecker and S. Trolier-Mckinstry and Schlom, {D. G.}",
year = "2008",
month = "12",
day = "1",
doi = "10.1063/1.3037216",
language = "English (US)",
volume = "104",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

Biegalski, MD, Fong, DD, Eastman, JA, Fuoss, PH, Streiffer, SK, Heeg, T, Schubert, J, Tian, W, Nelson, CT, Pan, XQ, Hawley, ME, Bernhagen, M, Reiche, P, Uecker, R, Trolier-Mckinstry, S & Schlom, DG 2008, 'Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3', Journal of Applied Physics, vol. 104, no. 11, 114109. https://doi.org/10.1063/1.3037216

Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3. / Biegalski, M. D.; Fong, D. D.; Eastman, J. A.; Fuoss, P. H.; Streiffer, S. K.; Heeg, T.; Schubert, J.; Tian, W.; Nelson, C. T.; Pan, X. Q.; Hawley, M. E.; Bernhagen, M.; Reiche, P.; Uecker, R.; Trolier-Mckinstry, S.; Schlom, D. G.

In: Journal of Applied Physics, Vol. 104, No. 11, 114109, 01.12.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3

AU - Biegalski, M. D.

AU - Fong, D. D.

AU - Eastman, J. A.

AU - Fuoss, P. H.

AU - Streiffer, S. K.

AU - Heeg, T.

AU - Schubert, J.

AU - Tian, W.

AU - Nelson, C. T.

AU - Pan, X. Q.

AU - Hawley, M. E.

AU - Bernhagen, M.

AU - Reiche, P.

AU - Uecker, R.

AU - Trolier-Mckinstry, S.

AU - Schlom, D. G.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - Strained epitaxial SrTiO3 films were grown on orthorhombic (101) DyScO3 substrates by reactive molecular-beam epitaxy. The epitaxy of this substrate/film combination is cube on cube with a pseudocubic out-of-plane (001) orientation. The strain state and structural perfection of films with thicknesses ranging from 50 to 1000 Å were examined using x-ray scattering. The critical thickness at which misfit dislocations was introduced was between 350 and 500 Å. These films have the narrowest rocking curves (full width at half maximum) ever reported for any heteroepitaxial oxide film (0.0018°). Only a modest amount of relaxation is seen in films exceeding the critical thicknesses even after postdeposition annealing at 700 °C in 1 atm of oxygen. The dependence of strain relaxation on crystallographic direction is attributed to the anisotropy of the substrate. These SrTiO3 films show structural quality more typical of semiconductors such as GaAs and silicon than perovskite materials; their structural relaxation behavior also shows similarity to that of compound semiconductor films.

AB - Strained epitaxial SrTiO3 films were grown on orthorhombic (101) DyScO3 substrates by reactive molecular-beam epitaxy. The epitaxy of this substrate/film combination is cube on cube with a pseudocubic out-of-plane (001) orientation. The strain state and structural perfection of films with thicknesses ranging from 50 to 1000 Å were examined using x-ray scattering. The critical thickness at which misfit dislocations was introduced was between 350 and 500 Å. These films have the narrowest rocking curves (full width at half maximum) ever reported for any heteroepitaxial oxide film (0.0018°). Only a modest amount of relaxation is seen in films exceeding the critical thicknesses even after postdeposition annealing at 700 °C in 1 atm of oxygen. The dependence of strain relaxation on crystallographic direction is attributed to the anisotropy of the substrate. These SrTiO3 films show structural quality more typical of semiconductors such as GaAs and silicon than perovskite materials; their structural relaxation behavior also shows similarity to that of compound semiconductor films.

UR - http://www.scopus.com/inward/record.url?scp=58149262864&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=58149262864&partnerID=8YFLogxK

U2 - 10.1063/1.3037216

DO - 10.1063/1.3037216

M3 - Article

AN - SCOPUS:58149262864

VL - 104

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

M1 - 114109

ER -

Biegalski MD, Fong DD, Eastman JA, Fuoss PH, Streiffer SK, Heeg T et al. Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3. Journal of Applied Physics. 2008 Dec 1;104(11). 114109. https://doi.org/10.1063/1.3037216