Crossover between weak antilocalization and weak localization in a magnetically doped topological insulator

Minhao Liu, Jinsong Zhang, Cui Zu Chang, Zuocheng Zhang, Xiao Feng, Kang Li, Ke He, Li Li Wang, Xi Chen, Xi Dai, Zhong Fang, Qi Kun Xue, Xucun Ma, Yayu Wang

Research output: Contribution to journalArticlepeer-review

240 Scopus citations

Abstract

We report transport studies on magnetically doped Bi 2Se 3 topological insulator ultrathin films grown by molecular beam epitaxy. The magnetotransport behavior exhibits a systematic crossover between weak antilocalization and weak localization with the change of magnetic impurity concentration, temperature, and magnetic field. We show that the localization property is closely related to the magnetization of the sample, and the complex crossover is due to the transformation of Bi 2Se 3 from a topological insulator to a topologically trivial dilute magnetic semiconductor driven by magnetic impurities. This work demonstrates an effective way to manipulate the quantum transport properties of the topological insulators by breaking time-reversal symmetry.

Original languageEnglish (US)
Article number036805
JournalPhysical review letters
Volume108
Issue number3
DOIs
StatePublished - Jan 19 2012

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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