Crossover from tunneling to metallic behavior in superconductor- semiconductor contacts

A. W. Kleinsasser, Thomas Nelson Jackson, D. McInturff, F. Rammo, G. D. Pettit, J. M. Woodall

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Abstract

We describe current-voltage measurements on superconducting Nb/InGaAs junction field-effect transistors which reveal a crossover from tunneling-dominated to Andreev scattering-dominated transport at the superconductor-semiconductor contacts as Schottky barrier thickness decreases with increasing interfacial dopant concentration. These measurements are the first demonstration of such a crossover in a thin-film structure, and are of interest for investigations of hybrid superconductor-semiconductor devices, proximity effect boundary conditions, and transport in ohmic contacts to semiconductors.

Original languageEnglish (US)
Pages (from-to)1811-1813
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number17
DOIs
StatePublished - Dec 1 1990

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Kleinsasser, A. W., Jackson, T. N., McInturff, D., Rammo, F., Pettit, G. D., & Woodall, J. M. (1990). Crossover from tunneling to metallic behavior in superconductor- semiconductor contacts. Applied Physics Letters, 57(17), 1811-1813. https://doi.org/10.1063/1.104029