CrPt Ohmic contacts to B 12 As 2

S. H. Wang, E. M. Lysczek, Bangzhi Liu, S. E. Mohney, Z. Xu, R. Nagarajan, J. H. Edgar

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Abstract

Palladium, Pt, and CrPt contacts to the wide band gap icosahedral boride semiconductor B12 As2 have been studied. All Pd and Pt contacts exhibited nonlinear I-V characteristics, while CrPt contacts were Ohmic. The specific contact resistance was reduced from 6 Ω cm2 as-deposited to 3× 10-4 Ω cm2 after the CrPt contacts were annealed at 750 °C for 30 s in Ar. Annealing at 600 °C or higher drastically reduced the semiconductor sheet resistance, whether annealing was performed before or after metallization. This apparent activation of the semiconductor is a likely cause for the improvement in the Ohmic contacts with annealing.

Original languageEnglish (US)
Article number042103
JournalApplied Physics Letters
Volume87
Issue number4
DOIs
StatePublished - Jul 25 2005

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Wang, S. H., Lysczek, E. M., Liu, B., Mohney, S. E., Xu, Z., Nagarajan, R., & Edgar, J. H. (2005). CrPt Ohmic contacts to B 12 As 2 Applied Physics Letters, 87(4), [042103]. https://doi.org/10.1063/1.2001760