CrPt Ohmic contacts to B 12 As 2

S. H. Wang, E. M. Lysczek, Bangzhi Liu, Suzanne E. Mohney, Z. Xu, R. Nagarajan, J. H. Edgar

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Palladium, Pt, and CrPt contacts to the wide band gap icosahedral boride semiconductor B12 As2 have been studied. All Pd and Pt contacts exhibited nonlinear I-V characteristics, while CrPt contacts were Ohmic. The specific contact resistance was reduced from 6 Ω cm2 as-deposited to 3× 10-4 Ω cm2 after the CrPt contacts were annealed at 750 °C for 30 s in Ar. Annealing at 600 °C or higher drastically reduced the semiconductor sheet resistance, whether annealing was performed before or after metallization. This apparent activation of the semiconductor is a likely cause for the improvement in the Ohmic contacts with annealing.

Original languageEnglish (US)
Article number042103
JournalApplied Physics Letters
Volume87
Issue number4
DOIs
StatePublished - Jul 25 2005

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electric contacts
annealing
borides
contact resistance
palladium
activation
broadband
causes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Wang, S. H., Lysczek, E. M., Liu, B., Mohney, S. E., Xu, Z., Nagarajan, R., & Edgar, J. H. (2005). CrPt Ohmic contacts to B 12 As 2 Applied Physics Letters, 87(4), [042103]. https://doi.org/10.1063/1.2001760
Wang, S. H. ; Lysczek, E. M. ; Liu, Bangzhi ; Mohney, Suzanne E. ; Xu, Z. ; Nagarajan, R. ; Edgar, J. H. / CrPt Ohmic contacts to B 12 As 2 In: Applied Physics Letters. 2005 ; Vol. 87, No. 4.
@article{7c8adbd1c3c347bc963bf5bc406b2eaa,
title = "CrPt Ohmic contacts to B 12 As 2",
abstract = "Palladium, Pt, and CrPt contacts to the wide band gap icosahedral boride semiconductor B12 As2 have been studied. All Pd and Pt contacts exhibited nonlinear I-V characteristics, while CrPt contacts were Ohmic. The specific contact resistance was reduced from 6 Ω cm2 as-deposited to 3× 10-4 Ω cm2 after the CrPt contacts were annealed at 750 °C for 30 s in Ar. Annealing at 600 °C or higher drastically reduced the semiconductor sheet resistance, whether annealing was performed before or after metallization. This apparent activation of the semiconductor is a likely cause for the improvement in the Ohmic contacts with annealing.",
author = "Wang, {S. H.} and Lysczek, {E. M.} and Bangzhi Liu and Mohney, {Suzanne E.} and Z. Xu and R. Nagarajan and Edgar, {J. H.}",
year = "2005",
month = "7",
day = "25",
doi = "10.1063/1.2001760",
language = "English (US)",
volume = "87",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

Wang, SH, Lysczek, EM, Liu, B, Mohney, SE, Xu, Z, Nagarajan, R & Edgar, JH 2005, 'CrPt Ohmic contacts to B 12 As 2 ', Applied Physics Letters, vol. 87, no. 4, 042103. https://doi.org/10.1063/1.2001760

CrPt Ohmic contacts to B 12 As 2 . / Wang, S. H.; Lysczek, E. M.; Liu, Bangzhi; Mohney, Suzanne E.; Xu, Z.; Nagarajan, R.; Edgar, J. H.

In: Applied Physics Letters, Vol. 87, No. 4, 042103, 25.07.2005.

Research output: Contribution to journalArticle

TY - JOUR

T1 - CrPt Ohmic contacts to B 12 As 2

AU - Wang, S. H.

AU - Lysczek, E. M.

AU - Liu, Bangzhi

AU - Mohney, Suzanne E.

AU - Xu, Z.

AU - Nagarajan, R.

AU - Edgar, J. H.

PY - 2005/7/25

Y1 - 2005/7/25

N2 - Palladium, Pt, and CrPt contacts to the wide band gap icosahedral boride semiconductor B12 As2 have been studied. All Pd and Pt contacts exhibited nonlinear I-V characteristics, while CrPt contacts were Ohmic. The specific contact resistance was reduced from 6 Ω cm2 as-deposited to 3× 10-4 Ω cm2 after the CrPt contacts were annealed at 750 °C for 30 s in Ar. Annealing at 600 °C or higher drastically reduced the semiconductor sheet resistance, whether annealing was performed before or after metallization. This apparent activation of the semiconductor is a likely cause for the improvement in the Ohmic contacts with annealing.

AB - Palladium, Pt, and CrPt contacts to the wide band gap icosahedral boride semiconductor B12 As2 have been studied. All Pd and Pt contacts exhibited nonlinear I-V characteristics, while CrPt contacts were Ohmic. The specific contact resistance was reduced from 6 Ω cm2 as-deposited to 3× 10-4 Ω cm2 after the CrPt contacts were annealed at 750 °C for 30 s in Ar. Annealing at 600 °C or higher drastically reduced the semiconductor sheet resistance, whether annealing was performed before or after metallization. This apparent activation of the semiconductor is a likely cause for the improvement in the Ohmic contacts with annealing.

UR - http://www.scopus.com/inward/record.url?scp=33947317362&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33947317362&partnerID=8YFLogxK

U2 - 10.1063/1.2001760

DO - 10.1063/1.2001760

M3 - Article

VL - 87

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

M1 - 042103

ER -

Wang SH, Lysczek EM, Liu B, Mohney SE, Xu Z, Nagarajan R et al. CrPt Ohmic contacts to B 12 As 2 Applied Physics Letters. 2005 Jul 25;87(4). 042103. https://doi.org/10.1063/1.2001760