Crystal growth and characterization of Sr3TaGa 3Si2O14 single crystals

F. P. Yu, D. R. Yuan, Shujun Zhang, X. Zhao, S. Y. Guo, X. L. Duan

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

High quality piezoelectric single crystals Sr3TaGa 3Si2O14 were grown using the conventional Czochralski method along the Y-axis. The mass density was found to be 5.121 g cm-3 by the Archimedes method. The relative dielectric constants, piezoelectric strain coefficients and elastic compliance constants of Sr 3TaGa3Si2O14 single crystals were determined by an electric bridge and the resonant-antiresonant method at room temperature. The results were , , d11 = -4.90 pC N-1, d14 = 3.20 pC N-1; ; ; ; ; ; and , respectively. The temperature dependent behaviour of elastic compliance constants was also investigated, where zero temperature compensated cuts were not found in the range from -40 to 120 °C.

Original languageEnglish (US)
Article number085112
JournalJournal of Physics D: Applied Physics
Volume42
Issue number8
DOIs
StatePublished - Nov 3 2009

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Crystallization
Crystal growth
electric bridges
crystal growth
Single crystals
piezoelectric crystals
Czochralski method
single crystals
Crystal growth from melt
permittivity
Temperature
temperature
room temperature
Permittivity
coefficients
Compliance

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Yu, F. P. ; Yuan, D. R. ; Zhang, Shujun ; Zhao, X. ; Guo, S. Y. ; Duan, X. L. / Crystal growth and characterization of Sr3TaGa 3Si2O14 single crystals. In: Journal of Physics D: Applied Physics. 2009 ; Vol. 42, No. 8.
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Crystal growth and characterization of Sr3TaGa 3Si2O14 single crystals. / Yu, F. P.; Yuan, D. R.; Zhang, Shujun; Zhao, X.; Guo, S. Y.; Duan, X. L.

In: Journal of Physics D: Applied Physics, Vol. 42, No. 8, 085112, 03.11.2009.

Research output: Contribution to journalArticle

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AU - Yu, F. P.

AU - Yuan, D. R.

AU - Zhang, Shujun

AU - Zhao, X.

AU - Guo, S. Y.

AU - Duan, X. L.

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AB - High quality piezoelectric single crystals Sr3TaGa 3Si2O14 were grown using the conventional Czochralski method along the Y-axis. The mass density was found to be 5.121 g cm-3 by the Archimedes method. The relative dielectric constants, piezoelectric strain coefficients and elastic compliance constants of Sr 3TaGa3Si2O14 single crystals were determined by an electric bridge and the resonant-antiresonant method at room temperature. The results were , , d11 = -4.90 pC N-1, d14 = 3.20 pC N-1; ; ; ; ; ; and , respectively. The temperature dependent behaviour of elastic compliance constants was also investigated, where zero temperature compensated cuts were not found in the range from -40 to 120 °C.

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