Crystal growth and characterization of Sr3TaGa 3Si2O14 single crystals

F. P. Yu, D. R. Yuan, S. J. Zhang, X. Zhao, S. Y. Guo, X. L. Duan

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

High quality piezoelectric single crystals Sr3TaGa 3Si2O14 were grown using the conventional Czochralski method along the Y-axis. The mass density was found to be 5.121 g cm-3 by the Archimedes method. The relative dielectric constants, piezoelectric strain coefficients and elastic compliance constants of Sr 3TaGa3Si2O14 single crystals were determined by an electric bridge and the resonant-antiresonant method at room temperature. The results were , , d11 = -4.90 pC N-1, d14 = 3.20 pC N-1; ; ; ; ; ; and , respectively. The temperature dependent behaviour of elastic compliance constants was also investigated, where zero temperature compensated cuts were not found in the range from -40 to 120 °C.

Original languageEnglish (US)
Article number085112
JournalJournal of Physics D: Applied Physics
Volume42
Issue number8
DOIs
StatePublished - Nov 3 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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