Crystal ion slicing of domain microengineered electro-optic devices on lithium niobate

David A. Scrymgeour, Venkatraman Gopalan, Tony E. Haynes

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report the successful fabrication of 6 um thick slices from a ferroelectric domain micro-engineered LiNb03 wafer device using the crystal ion slicing technique. The device was created by micropatterning ferroelectric domains in a bulk 0.3 mm thick wafer of z-cut LiNbOb, followed by ion-implanting with high energy He+ ions to create a damage layer at a well defined depth from the surface. Etching away this damaged layer in dilute hydrofluoric acid results in a liftoff of the top slice in which the ferroelectric domain patterns are left intact.

Original languageEnglish (US)
Pages (from-to)35-42
Number of pages8
JournalIntegrated Ferroelectrics
Volume41
Issue number1-4
DOIs
StatePublished - Dec 1 2001

Fingerprint

slicing
Electrooptical effects
lithium niobates
electro-optics
Ferroelectric materials
Lithium
Ions
Crystals
wafers
Hydrofluoric Acid
crystals
ions
Hydrofluoric acid
hydrofluoric acid
Etching
etching
damage
Fabrication
fabrication
lithium niobate

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Control and Systems Engineering

Cite this

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Crystal ion slicing of domain microengineered electro-optic devices on lithium niobate. / Scrymgeour, David A.; Gopalan, Venkatraman; Haynes, Tony E.

In: Integrated Ferroelectrics, Vol. 41, No. 1-4, 01.12.2001, p. 35-42.

Research output: Contribution to journalArticle

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AB - We report the successful fabrication of 6 um thick slices from a ferroelectric domain micro-engineered LiNb03 wafer device using the crystal ion slicing technique. The device was created by micropatterning ferroelectric domains in a bulk 0.3 mm thick wafer of z-cut LiNbOb, followed by ion-implanting with high energy He+ ions to create a damage layer at a well defined depth from the surface. Etching away this damaged layer in dilute hydrofluoric acid results in a liftoff of the top slice in which the ferroelectric domain patterns are left intact.

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