We report the successful fabrication of 6 um thick slices from a ferroelectric domain micro-engineered LiNb03 wafer device using the crystal ion slicing technique. The device was created by micropatterning ferroelectric domains in a bulk 0.3 mm thick wafer of z-cut LiNbOb, followed by ion-implanting with high energy He+ ions to create a damage layer at a well defined depth from the surface. Etching away this damaged layer in dilute hydrofluoric acid results in a liftoff of the top slice in which the ferroelectric domain patterns are left intact.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Control and Systems Engineering
- Ceramics and Composites
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry