Crystallization in SiO2-metal oxide alloys

J. P. Maria, D. Wickaksana, J. Parrette, A. I. Kingon

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63 Scopus citations

Abstract

HfO2-SiO2 and La2O3-SiO2 amorphous alloys were prepared, and their crystallization behavior was studied. The results suggest that higher permittivities can be achieved in the La-containing system without devitrification. The crystallization mechanisms between systems are distinctly different, yet observations are consistent with bulk material. Hf-containing materials tend toward phase separation, while La-containing materials tend toward silicate formation. For Hf-containing films, negligible thickness or time dependence was observed. In La-containing films, rapid thermal anneals could improve crystallization resistance, and thickness effects related to interface reactions were observed. These behaviors are discussed in the context of phase diagrams and metastable immiscibility.

Original languageEnglish (US)
Pages (from-to)1571-1579
Number of pages9
JournalJournal of Materials Research
Volume17
Issue number7
DOIs
StatePublished - Jul 2002

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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