Crystallization of ThSiO4 from structurally and/or compositionally diphasic gels

Gabriel Vilmin, Sridhar Komarneni, Rustum Roy

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32 Scopus citations


The use of structurally and/or compositionally diphasic gels has been shown earlier to have profound effects in lowering the crystallization temperature and enhancing densification in several systems. In this study of solid-state epitaxy the ThSiO4 composition has been investigated. The use of compositional diphasicity allows one to lower the huttonite (/?-ThSiO4) crystallization temperature by as much as 200 °C. Using crystalline thorite (a-ThSiO4) as second phase nuclei partially stabilizes this phase (hypothetically metastable), while the introduction of huttonite nuclei completely inhibits the formation of the a form, which appears in detectable quantities in the unseeded precursors. This confirms the structural (epitaxial) control of the solid-state reaction. The use of structural or compositional nanoheterogeneity clearly helps to lower the crystallization temperature and to stabilize a particular polymorph in ceramics processed by the sol-gel route, and this principle can certainly be utilized more generally.

Original languageEnglish (US)
Pages (from-to)489-493
Number of pages5
JournalJournal of Materials Research
Issue number4
StatePublished - Aug 1987

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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