Crystallographic dependence of loss in domain engineered relaxor-PT single crystals

Shujun Zhang, Nevin P. Sherlock, Richard J. Meyer, Thomas R. Shrout

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Abstract

Domain engineered 〈 001 〉 oriented relaxor- PbTiO3 ferroelectric crystals exhibit high electromechanical properties and low mechanical Q values, analogous to "soft" piezoelectric ceramics. However, their characteristic low dielectric loss (0.5%) and strain-electric field hysteresis are reflective of "hard" piezoelectric materials. In this work, the electromechanical behavior of relaxor-PT crystals was investigated as a function of crystallographic orientations. It was found that the electrical and mechanical losses in crystals depends on the specific engineered domain configuration, with high Q observed for the 〈 110 〉 orientation. The high Q, together with high electromechanical coupling (∼0.9) for 〈 110 〉 oriented relaxor-PT crystals, make them promising candidates for resonant based high power transducer applications.

Original languageEnglish (US)
Article number162906
JournalApplied Physics Letters
Volume94
Issue number16
DOIs
StatePublished - May 6 2009

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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