Crystallographic dependence of loss in domain engineered relaxor-PT single crystals

Shujun Zhang; Nevin P. Sherlock; Richard J. Meyer; Thomas R. Shrout

doi:10.1063/1.3125431

Crystallographic dependence of loss in domain engineered relaxor-PT single crystals

Shujun Zhang, Nevin P. Sherlock, Richard J. Meyer, Thomas R. Shrout

Research output: Contribution to journal › Article › peer-review

67 Scopus citations

Abstract

Domain engineered 〈 001 〉 oriented relaxor- PbTiO3 ferroelectric crystals exhibit high electromechanical properties and low mechanical Q values, analogous to "soft" piezoelectric ceramics. However, their characteristic low dielectric loss (0.5%) and strain-electric field hysteresis are reflective of "hard" piezoelectric materials. In this work, the electromechanical behavior of relaxor-PT crystals was investigated as a function of crystallographic orientations. It was found that the electrical and mechanical losses in crystals depends on the specific engineered domain configuration, with high Q observed for the 〈 110 〉 orientation. The high Q, together with high electromechanical coupling (∼0.9) for 〈 110 〉 oriented relaxor-PT crystals, make them promising candidates for resonant based high power transducer applications.

Original language	English (US)
Article number	162906
Journal	Applied Physics Letters
Volume	94
Issue number	16
DOIs	https://doi.org/10.1063/1.3125431
State	Published - 2009

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3125431

Cite this

@article{ae6de6ebb5934ece827e75a7013bd38b,

title = "Crystallographic dependence of loss in domain engineered relaxor-PT single crystals",

abstract = "Domain engineered 〈 001 〉 oriented relaxor- PbTiO3 ferroelectric crystals exhibit high electromechanical properties and low mechanical Q values, analogous to {"}soft{"} piezoelectric ceramics. However, their characteristic low dielectric loss (0.5%) and strain-electric field hysteresis are reflective of {"}hard{"} piezoelectric materials. In this work, the electromechanical behavior of relaxor-PT crystals was investigated as a function of crystallographic orientations. It was found that the electrical and mechanical losses in crystals depends on the specific engineered domain configuration, with high Q observed for the 〈 110 〉 orientation. The high Q, together with high electromechanical coupling (∼0.9) for 〈 110 〉 oriented relaxor-PT crystals, make them promising candidates for resonant based high power transducer applications.",

author = "Shujun Zhang and Sherlock, {Nevin P.} and Meyer, {Richard J.} and Shrout, {Thomas R.}",

note = "Funding Information: This work was supported by the ONR and NIH under Contract No. P41-RR11795. The authors thank to Dr. Jun Luo from TRS Technologies Inc., for offering the relaxor-PT single crystals. The authors also thank Ms. Ru Xia for the sample preparation.",

year = "2009",

doi = "10.1063/1.3125431",

language = "English (US)",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "16",

}

TY - JOUR

T1 - Crystallographic dependence of loss in domain engineered relaxor-PT single crystals

AU - Zhang, Shujun

AU - Sherlock, Nevin P.

AU - Meyer, Richard J.

AU - Shrout, Thomas R.

N1 - Funding Information: This work was supported by the ONR and NIH under Contract No. P41-RR11795. The authors thank to Dr. Jun Luo from TRS Technologies Inc., for offering the relaxor-PT single crystals. The authors also thank Ms. Ru Xia for the sample preparation.

PY - 2009

Y1 - 2009

N2 - Domain engineered 〈 001 〉 oriented relaxor- PbTiO3 ferroelectric crystals exhibit high electromechanical properties and low mechanical Q values, analogous to "soft" piezoelectric ceramics. However, their characteristic low dielectric loss (0.5%) and strain-electric field hysteresis are reflective of "hard" piezoelectric materials. In this work, the electromechanical behavior of relaxor-PT crystals was investigated as a function of crystallographic orientations. It was found that the electrical and mechanical losses in crystals depends on the specific engineered domain configuration, with high Q observed for the 〈 110 〉 orientation. The high Q, together with high electromechanical coupling (∼0.9) for 〈 110 〉 oriented relaxor-PT crystals, make them promising candidates for resonant based high power transducer applications.

AB - Domain engineered 〈 001 〉 oriented relaxor- PbTiO3 ferroelectric crystals exhibit high electromechanical properties and low mechanical Q values, analogous to "soft" piezoelectric ceramics. However, their characteristic low dielectric loss (0.5%) and strain-electric field hysteresis are reflective of "hard" piezoelectric materials. In this work, the electromechanical behavior of relaxor-PT crystals was investigated as a function of crystallographic orientations. It was found that the electrical and mechanical losses in crystals depends on the specific engineered domain configuration, with high Q observed for the 〈 110 〉 orientation. The high Q, together with high electromechanical coupling (∼0.9) for 〈 110 〉 oriented relaxor-PT crystals, make them promising candidates for resonant based high power transducer applications.

UR - http://www.scopus.com/inward/record.url?scp=65449145541&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=65449145541&partnerID=8YFLogxK

U2 - 10.1063/1.3125431

DO - 10.1063/1.3125431

M3 - Article

AN - SCOPUS:65449145541

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 162906

ER -

Crystallographic dependence of loss in domain engineered relaxor-PT single crystals

Abstract

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