Crystallographic engineering in high-performance piezoelectric crystals

Seung Eek Park, Satoshi Wada, Paul W. Rehrig, Shi Fang Liu, L. Eric Cross, Thomas R. Shrout

Research output: Contribution to journalConference article

6 Scopus citations

Abstract

Crystallographic engineering, a concept to utilize crystal anisotropy as well as an engineered domain configuration, resulted in significant enhancement in piezoelectric activity for normal ferroelectric BaTiO3 crystals. Electromechanical couplings (k33) to approximately 85% and piezoelectric coefficients (d33) as high as 500 pC/N, higher or comparable to those of lead based ceramics such as PZT and significantly larger than those of tetragonal BaTiO3 crystals (k33 to approximately 65%, d33 to approximately 130 pC/N), were detected from crystallographically engineered orthorhombic BaTiO3 crystals. Orthorhombic BaTiO3 phase could be stabilized by Zr-doping at room temperature and enhanced electromechanical coupling (k33) to approximately 75% was detected also by using crystallographic engineering. Macroscopic symmetry (4 mm) was suggested for 〈001〉 poled rhombohedral (3 m) and orthorhombic (2 mm) crystals, based on the engineered domain configuration.

Original languageEnglish (US)
Pages (from-to)2-9
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3675
StatePublished - Jan 1 1999
EventProceedings of the 1999 Smart Structures and Materials on Smart Materials Technologies - Newport Beach, CA, USA
Duration: Mar 3 1999Mar 4 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Park, S. E., Wada, S., Rehrig, P. W., Liu, S. F., Cross, L. E., & Shrout, T. R. (1999). Crystallographic engineering in high-performance piezoelectric crystals. Proceedings of SPIE - The International Society for Optical Engineering, 3675, 2-9.