Crystallographic wet chemical etching of p-type GaN

D. A. Stocker, I. D. Goepfert, E. F. Schubert, K. S. Boutros, J. M. Redwing

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

We demonstrate crystallographic wet chemical etching of p-type GaN with etch rates as high as 1.2 μm/min. Etchants used include molten KOH, KOH dissolved in ethylene glycol, aqueous tetraethylammonium hydroxide, and phosphoric acid (H3PO4), at temperatures ranging from 90 to 260°C. The observed crystallographic p-GaN etch planes are (0001), {101̄0}, and {101̄2}. The etch rates follow an Arrhenius characteristic with activation energies varying from 21 kcal/mol for KOH-based solutions to 33 kcal/mol for H3PO4. The etch rate and crystallographic nature for the various etching solutions are independent of conductivity, as shown by seamless etching of a p-GaN/undoped, high-resistivity GaN homojunction and by comparison of the etch rates of p-GaN with n-GaN.

Original languageEnglish (US)
Pages (from-to)763-764
Number of pages2
JournalJournal of the Electrochemical Society
Volume147
Issue number2
DOIs
StatePublished - Feb 1 2000

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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