Crystallographically engineered BaTiO3 single crystals for high-performance piezoelectrics

Seung Eek Park; Satoshi Wada; L. E. Cross; Thomas R. Shrout

doi:10.1063/1.371120

Crystallographically engineered BaTiO₃ single crystals for high-performance piezoelectrics

Seung Eek Park, Satoshi Wada, L. E. Cross, Thomas R. Shrout

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

270 Scopus citations

Abstract

Dielectric and piezoelectric properties of BaTiO₃ single crystals polarized along the 〈001〉 crystallographic axes were investigated as a function of temperature and dc bias. Electromechanical coupling (k₃₃)≃85% and piezoelectric coefficients (d₃₃)≃500 pC/N, better or comparable to those of lead-based Pb(Zr,Ti)O₃ (PZT), were found from 〈001〉-oriented orthorhombic crystals at 0°C, as a result of crystallographic engineering. A rhombohedral BaTiO₃ crystal polarized along 〈001〉 also exhibited enhanced piezoelectric performance, i.e., k₃₃≃79% and d₃₃≃400pC/N at -90°C, superior to PZTs at the same temperature. It was found that the crystal structure determined the (in)stability of the engineered domain state in BaTiO₃ single crystals. Rhombohedral (3m) crystals at -100°C exhibited a stable domain configuration, whereas depoling occurred in crystals in the adjacent orthorhombic phase upon removal of the E field.

Original language	English (US)
Pages (from-to)	2746-2750
Number of pages	5
Journal	Journal of Applied Physics
Volume	86
Issue number	5
DOIs	https://doi.org/10.1063/1.371120
State	Published - Sep 1 1999

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.1063/1.371120

Cite this

@article{6dfbc60c7d9948db87b245de90b09f53,

title = "Crystallographically engineered BaTiO3 single crystals for high-performance piezoelectrics",

abstract = "Dielectric and piezoelectric properties of BaTiO3 single crystals polarized along the 〈001〉 crystallographic axes were investigated as a function of temperature and dc bias. Electromechanical coupling (k33)≃85% and piezoelectric coefficients (d33)≃500 pC/N, better or comparable to those of lead-based Pb(Zr,Ti)O3 (PZT), were found from 〈001〉-oriented orthorhombic crystals at 0°C, as a result of crystallographic engineering. A rhombohedral BaTiO3 crystal polarized along 〈001〉 also exhibited enhanced piezoelectric performance, i.e., k33≃79% and d33≃400pC/N at -90°C, superior to PZTs at the same temperature. It was found that the crystal structure determined the (in)stability of the engineered domain state in BaTiO3 single crystals. Rhombohedral (3m) crystals at -100°C exhibited a stable domain configuration, whereas depoling occurred in crystals in the adjacent orthorhombic phase upon removal of the E field.",

author = "Park, {Seung Eek} and Satoshi Wada and Cross, {L. E.} and Shrout, {Thomas R.}",

year = "1999",

month = sep,

day = "1",

doi = "10.1063/1.371120",

language = "English (US)",

volume = "86",

pages = "2746--2750",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "5",

}

TY - JOUR

T1 - Crystallographically engineered BaTiO3 single crystals for high-performance piezoelectrics

AU - Park, Seung Eek

AU - Wada, Satoshi

AU - Cross, L. E.

AU - Shrout, Thomas R.

PY - 1999/9/1

Y1 - 1999/9/1

N2 - Dielectric and piezoelectric properties of BaTiO3 single crystals polarized along the 〈001〉 crystallographic axes were investigated as a function of temperature and dc bias. Electromechanical coupling (k33)≃85% and piezoelectric coefficients (d33)≃500 pC/N, better or comparable to those of lead-based Pb(Zr,Ti)O3 (PZT), were found from 〈001〉-oriented orthorhombic crystals at 0°C, as a result of crystallographic engineering. A rhombohedral BaTiO3 crystal polarized along 〈001〉 also exhibited enhanced piezoelectric performance, i.e., k33≃79% and d33≃400pC/N at -90°C, superior to PZTs at the same temperature. It was found that the crystal structure determined the (in)stability of the engineered domain state in BaTiO3 single crystals. Rhombohedral (3m) crystals at -100°C exhibited a stable domain configuration, whereas depoling occurred in crystals in the adjacent orthorhombic phase upon removal of the E field.

AB - Dielectric and piezoelectric properties of BaTiO3 single crystals polarized along the 〈001〉 crystallographic axes were investigated as a function of temperature and dc bias. Electromechanical coupling (k33)≃85% and piezoelectric coefficients (d33)≃500 pC/N, better or comparable to those of lead-based Pb(Zr,Ti)O3 (PZT), were found from 〈001〉-oriented orthorhombic crystals at 0°C, as a result of crystallographic engineering. A rhombohedral BaTiO3 crystal polarized along 〈001〉 also exhibited enhanced piezoelectric performance, i.e., k33≃79% and d33≃400pC/N at -90°C, superior to PZTs at the same temperature. It was found that the crystal structure determined the (in)stability of the engineered domain state in BaTiO3 single crystals. Rhombohedral (3m) crystals at -100°C exhibited a stable domain configuration, whereas depoling occurred in crystals in the adjacent orthorhombic phase upon removal of the E field.

UR - http://www.scopus.com/inward/record.url?scp=0001527742&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001527742&partnerID=8YFLogxK

U2 - 10.1063/1.371120

DO - 10.1063/1.371120

M3 - Article

AN - SCOPUS:0001527742

VL - 86

SP - 2746

EP - 2750

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 5

ER -

Crystallographically engineered BaTiO₃ single crystals for high-performance piezoelectrics

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this