Crystallographically engineered BaTiO3 single crystals for high-performance piezoelectrics

Seung Eek Park; Satoshi Wada; L. E. Cross; Thomas R. Shrout

doi:10.1063/1.371120

Crystallographically engineered BaTiO₃ single crystals for high-performance piezoelectrics

Seung Eek Park, Satoshi Wada, L. E. Cross, Thomas R. Shrout

Materials Research Institute (MRI)

Research output: Contribution to journal › Article

251 Scopus citations

Abstract

Dielectric and piezoelectric properties of BaTiO₃ single crystals polarized along the 〈001〉 crystallographic axes were investigated as a function of temperature and dc bias. Electromechanical coupling (k₃₃)≃85% and piezoelectric coefficients (d₃₃)≃500 pC/N, better or comparable to those of lead-based Pb(Zr,Ti)O₃ (PZT), were found from 〈001〉-oriented orthorhombic crystals at 0°C, as a result of crystallographic engineering. A rhombohedral BaTiO₃ crystal polarized along 〈001〉 also exhibited enhanced piezoelectric performance, i.e., k₃₃≃79% and d₃₃≃400pC/N at -90°C, superior to PZTs at the same temperature. It was found that the crystal structure determined the (in)stability of the engineered domain state in BaTiO₃ single crystals. Rhombohedral (3m) crystals at -100°C exhibited a stable domain configuration, whereas depoling occurred in crystals in the adjacent orthorhombic phase upon removal of the E field.

Original language	English (US)
Pages (from-to)	2746-2750
Number of pages	5
Journal	Journal of Applied Physics
Volume	86
Issue number	5
DOIs	https://doi.org/10.1063/1.371120
State	Published - Sep 1 1999

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.371120

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Park, S. E., Wada, S., Cross, L. E., & Shrout, T. R. (1999). Crystallographically engineered BaTiO₃ single crystals for high-performance piezoelectrics. Journal of Applied Physics, 86(5), 2746-2750. https://doi.org/10.1063/1.371120

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title = "Crystallographically engineered BaTiO3 single crystals for high-performance piezoelectrics",

abstract = "Dielectric and piezoelectric properties of BaTiO3 single crystals polarized along the 〈001〉 crystallographic axes were investigated as a function of temperature and dc bias. Electromechanical coupling (k33)≃85% and piezoelectric coefficients (d33)≃500 pC/N, better or comparable to those of lead-based Pb(Zr,Ti)O3 (PZT), were found from 〈001〉-oriented orthorhombic crystals at 0°C, as a result of crystallographic engineering. A rhombohedral BaTiO3 crystal polarized along 〈001〉 also exhibited enhanced piezoelectric performance, i.e., k33≃79% and d33≃400pC/N at -90°C, superior to PZTs at the same temperature. It was found that the crystal structure determined the (in)stability of the engineered domain state in BaTiO3 single crystals. Rhombohedral (3m) crystals at -100°C exhibited a stable domain configuration, whereas depoling occurred in crystals in the adjacent orthorhombic phase upon removal of the E field.",

author = "Park, {Seung Eek} and Satoshi Wada and Cross, {L. E.} and Shrout, {Thomas R.}",

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AU - Cross, L. E.

AU - Shrout, Thomas R.

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N2 - Dielectric and piezoelectric properties of BaTiO3 single crystals polarized along the 〈001〉 crystallographic axes were investigated as a function of temperature and dc bias. Electromechanical coupling (k33)≃85% and piezoelectric coefficients (d33)≃500 pC/N, better or comparable to those of lead-based Pb(Zr,Ti)O3 (PZT), were found from 〈001〉-oriented orthorhombic crystals at 0°C, as a result of crystallographic engineering. A rhombohedral BaTiO3 crystal polarized along 〈001〉 also exhibited enhanced piezoelectric performance, i.e., k33≃79% and d33≃400pC/N at -90°C, superior to PZTs at the same temperature. It was found that the crystal structure determined the (in)stability of the engineered domain state in BaTiO3 single crystals. Rhombohedral (3m) crystals at -100°C exhibited a stable domain configuration, whereas depoling occurred in crystals in the adjacent orthorhombic phase upon removal of the E field.

AB - Dielectric and piezoelectric properties of BaTiO3 single crystals polarized along the 〈001〉 crystallographic axes were investigated as a function of temperature and dc bias. Electromechanical coupling (k33)≃85% and piezoelectric coefficients (d33)≃500 pC/N, better or comparable to those of lead-based Pb(Zr,Ti)O3 (PZT), were found from 〈001〉-oriented orthorhombic crystals at 0°C, as a result of crystallographic engineering. A rhombohedral BaTiO3 crystal polarized along 〈001〉 also exhibited enhanced piezoelectric performance, i.e., k33≃79% and d33≃400pC/N at -90°C, superior to PZTs at the same temperature. It was found that the crystal structure determined the (in)stability of the engineered domain state in BaTiO3 single crystals. Rhombohedral (3m) crystals at -100°C exhibited a stable domain configuration, whereas depoling occurred in crystals in the adjacent orthorhombic phase upon removal of the E field.

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