Abstract
Dielectric and piezoelectric properties of BaTiO3 single crystals polarized along the 〈001〉 crystallographic axes were investigated as a function of temperature and dc bias. Electromechanical coupling (k33)≃85% and piezoelectric coefficients (d33)≃500 pC/N, better or comparable to those of lead-based Pb(Zr,Ti)O3 (PZT), were found from 〈001〉-oriented orthorhombic crystals at 0°C, as a result of crystallographic engineering. A rhombohedral BaTiO3 crystal polarized along 〈001〉 also exhibited enhanced piezoelectric performance, i.e., k33≃79% and d33≃400pC/N at -90°C, superior to PZTs at the same temperature. It was found that the crystal structure determined the (in)stability of the engineered domain state in BaTiO3 single crystals. Rhombohedral (3m) crystals at -100°C exhibited a stable domain configuration, whereas depoling occurred in crystals in the adjacent orthorhombic phase upon removal of the E field.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2746-2750 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 86 |
| Issue number | 5 |
| DOIs | |
| State | Published - Sep 1 1999 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Crystallographically engineered BaTiO3 single crystals for high-performance piezoelectrics. / Park, Seung Eek; Wada, Satoshi; Cross, L. E.; Shrout, Thomas R.
In: Journal of Applied Physics, Vol. 86, No. 5, 01.09.1999, p. 2746-2750.Research output: Contribution to journal › Article
TY - JOUR
T1 - Crystallographically engineered BaTiO3 single crystals for high-performance piezoelectrics
AU - Park, Seung Eek
AU - Wada, Satoshi
AU - Cross, L. E.
AU - Shrout, Thomas R.
PY - 1999/9/1
Y1 - 1999/9/1
N2 - Dielectric and piezoelectric properties of BaTiO3 single crystals polarized along the 〈001〉 crystallographic axes were investigated as a function of temperature and dc bias. Electromechanical coupling (k33)≃85% and piezoelectric coefficients (d33)≃500 pC/N, better or comparable to those of lead-based Pb(Zr,Ti)O3 (PZT), were found from 〈001〉-oriented orthorhombic crystals at 0°C, as a result of crystallographic engineering. A rhombohedral BaTiO3 crystal polarized along 〈001〉 also exhibited enhanced piezoelectric performance, i.e., k33≃79% and d33≃400pC/N at -90°C, superior to PZTs at the same temperature. It was found that the crystal structure determined the (in)stability of the engineered domain state in BaTiO3 single crystals. Rhombohedral (3m) crystals at -100°C exhibited a stable domain configuration, whereas depoling occurred in crystals in the adjacent orthorhombic phase upon removal of the E field.
AB - Dielectric and piezoelectric properties of BaTiO3 single crystals polarized along the 〈001〉 crystallographic axes were investigated as a function of temperature and dc bias. Electromechanical coupling (k33)≃85% and piezoelectric coefficients (d33)≃500 pC/N, better or comparable to those of lead-based Pb(Zr,Ti)O3 (PZT), were found from 〈001〉-oriented orthorhombic crystals at 0°C, as a result of crystallographic engineering. A rhombohedral BaTiO3 crystal polarized along 〈001〉 also exhibited enhanced piezoelectric performance, i.e., k33≃79% and d33≃400pC/N at -90°C, superior to PZTs at the same temperature. It was found that the crystal structure determined the (in)stability of the engineered domain state in BaTiO3 single crystals. Rhombohedral (3m) crystals at -100°C exhibited a stable domain configuration, whereas depoling occurred in crystals in the adjacent orthorhombic phase upon removal of the E field.
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U2 - 10.1063/1.371120
DO - 10.1063/1.371120
M3 - Article
AN - SCOPUS:0001527742
VL - 86
SP - 2746
EP - 2750
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 5
ER -