Crystallographically engineered BaTiO3 single crystals for high-performance piezoelectrics

Seung Eek Park, Satoshi Wada, L. E. Cross, Thomas R. Shrout

Research output: Contribution to journalArticle

237 Citations (Scopus)

Abstract

Dielectric and piezoelectric properties of BaTiO3 single crystals polarized along the 〈001〉 crystallographic axes were investigated as a function of temperature and dc bias. Electromechanical coupling (k33)≃85% and piezoelectric coefficients (d33)≃500 pC/N, better or comparable to those of lead-based Pb(Zr,Ti)O3 (PZT), were found from 〈001〉-oriented orthorhombic crystals at 0°C, as a result of crystallographic engineering. A rhombohedral BaTiO3 crystal polarized along 〈001〉 also exhibited enhanced piezoelectric performance, i.e., k33≃79% and d33≃400pC/N at -90°C, superior to PZTs at the same temperature. It was found that the crystal structure determined the (in)stability of the engineered domain state in BaTiO3 single crystals. Rhombohedral (3m) crystals at -100°C exhibited a stable domain configuration, whereas depoling occurred in crystals in the adjacent orthorhombic phase upon removal of the E field.

Original languageEnglish (US)
Pages (from-to)2746-2750
Number of pages5
JournalJournal of Applied Physics
Volume86
Issue number5
DOIs
StatePublished - Sep 1 1999

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single crystals
crystals
dielectric properties
engineering
crystal structure
temperature
coefficients
configurations

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Park, Seung Eek ; Wada, Satoshi ; Cross, L. E. ; Shrout, Thomas R. / Crystallographically engineered BaTiO3 single crystals for high-performance piezoelectrics. In: Journal of Applied Physics. 1999 ; Vol. 86, No. 5. pp. 2746-2750.
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Crystallographically engineered BaTiO3 single crystals for high-performance piezoelectrics. / Park, Seung Eek; Wada, Satoshi; Cross, L. E.; Shrout, Thomas R.

In: Journal of Applied Physics, Vol. 86, No. 5, 01.09.1999, p. 2746-2750.

Research output: Contribution to journalArticle

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