Current advances in anhydrous HF/organic solvent processing of semiconductor surfaces

P. Roman, K. Torek, K. Shanmugasundaram, P. Mumbauer, D. Vestyck, P. Hammond, J. Ruzyllo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

The process in which anhydrous HF (AHF) is mixed with the vapor of an organic solvent for the purpose of etching of native SiO2 on Si surfaces is well established (e.g [1-4]). The process was also explored as part of a dry-wet wafer cleaning sequence [5]. More recently, the same process has been successfully expanded into MEMS technology for the purpose of stiction-free releasing of structures by isotropic etching of sacrificial SiO2 [6,7]. The current strong push in advanced Si digital IC technology toward extremely fragile 3D geometries engraved on Si wafer surfaces, in which case conventional etch methods may not work properly [8], as well as needs with regard to native oxide etching in emerging Si-based technologies such as solar cell manufacturing has brought about renewed interest in AHF technology.

Original languageEnglish (US)
Title of host publicationUltra Clean Processing of Semiconductor Surfaces IX
Subtitle of host publicationUCPSS 2008
PublisherTrans Tech Publications Ltd
Pages231-234
Number of pages4
ISBN (Print)3908451647, 9783908451648
DOIs
StatePublished - Jan 1 2009
Event9th international symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2008 - Bruges, Belgium
Duration: Sep 22 2008Sep 24 2008

Publication series

NameSolid State Phenomena
Volume145-146
ISSN (Print)1012-0394

Other

Other9th international symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2008
CountryBelgium
CityBruges
Period9/22/089/24/08

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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