Current advances in anhydrous HF/organic solvent processing of semiconductor surfaces

P. Roman, K. Torek, K. Shanmugasundaram, P. Mumbauer, D. Vestyck, P. Hammond, Jerzy Ruzyllo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The process in which anhydrous HF (AHF) is mixed with the vapor of an organic solvent for the purpose of etching of native SiO2 on Si surfaces is well established (e.g [1-4]). The process was also explored as part of a dry-wet wafer cleaning sequence [5]. More recently, the same process has been successfully expanded into MEMS technology for the purpose of stiction-free releasing of structures by isotropic etching of sacrificial SiO2 [6,7]. The current strong push in advanced Si digital IC technology toward extremely fragile 3D geometries engraved on Si wafer surfaces, in which case conventional etch methods may not work properly [8], as well as needs with regard to native oxide etching in emerging Si-based technologies such as solar cell manufacturing has brought about renewed interest in AHF technology.

Original languageEnglish (US)
Title of host publicationUltra Clean Processing of Semiconductor Surfaces IX
Subtitle of host publicationUCPSS 2008
PublisherTrans Tech Publications Ltd
Pages231-234
Number of pages4
ISBN (Print)3908451647, 9783908451648
DOIs
StatePublished - Jan 1 2009
Event9th international symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2008 - Bruges, Belgium
Duration: Sep 22 2008Sep 24 2008

Publication series

NameSolid State Phenomena
Volume145-146
ISSN (Print)1012-0394

Other

Other9th international symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2008
CountryBelgium
CityBruges
Period9/22/089/24/08

Fingerprint

Organic solvents
etching
Semiconductor materials
Etching
Processing
wafers
stiction
releasing
Stiction
cleaning
microelectromechanical systems
emerging
manufacturing
solar cells
vapors
Oxides
MEMS
Cleaning
Solar cells
oxides

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Roman, P., Torek, K., Shanmugasundaram, K., Mumbauer, P., Vestyck, D., Hammond, P., & Ruzyllo, J. (2009). Current advances in anhydrous HF/organic solvent processing of semiconductor surfaces. In Ultra Clean Processing of Semiconductor Surfaces IX: UCPSS 2008 (pp. 231-234). (Solid State Phenomena; Vol. 145-146). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.145-146.231
Roman, P. ; Torek, K. ; Shanmugasundaram, K. ; Mumbauer, P. ; Vestyck, D. ; Hammond, P. ; Ruzyllo, Jerzy. / Current advances in anhydrous HF/organic solvent processing of semiconductor surfaces. Ultra Clean Processing of Semiconductor Surfaces IX: UCPSS 2008. Trans Tech Publications Ltd, 2009. pp. 231-234 (Solid State Phenomena).
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Roman, P, Torek, K, Shanmugasundaram, K, Mumbauer, P, Vestyck, D, Hammond, P & Ruzyllo, J 2009, Current advances in anhydrous HF/organic solvent processing of semiconductor surfaces. in Ultra Clean Processing of Semiconductor Surfaces IX: UCPSS 2008. Solid State Phenomena, vol. 145-146, Trans Tech Publications Ltd, pp. 231-234, 9th international symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2008, Bruges, Belgium, 9/22/08. https://doi.org/10.4028/www.scientific.net/SSP.145-146.231

Current advances in anhydrous HF/organic solvent processing of semiconductor surfaces. / Roman, P.; Torek, K.; Shanmugasundaram, K.; Mumbauer, P.; Vestyck, D.; Hammond, P.; Ruzyllo, Jerzy.

Ultra Clean Processing of Semiconductor Surfaces IX: UCPSS 2008. Trans Tech Publications Ltd, 2009. p. 231-234 (Solid State Phenomena; Vol. 145-146).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Roman P, Torek K, Shanmugasundaram K, Mumbauer P, Vestyck D, Hammond P et al. Current advances in anhydrous HF/organic solvent processing of semiconductor surfaces. In Ultra Clean Processing of Semiconductor Surfaces IX: UCPSS 2008. Trans Tech Publications Ltd. 2009. p. 231-234. (Solid State Phenomena). https://doi.org/10.4028/www.scientific.net/SSP.145-146.231