Current-driven interface magnetic transition in complex oxide heterostructure

F. Fang, H. Zhai, X. Ma, Y. W. Yin, Qi Li, G. Lüpke

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Abstract

The interfacial spin state of n-type BaTiO3/La0.5Ca0.5MnO3/La0.7Sr0.3MnO3 heterojunction and its dependence on gate voltage is investigated with magnetic second-harmonic generation at 78 K. The injection of minority spins alters the interface magnetization of La0.7Sr0.3MnO3 from ferromagnetic to antiferromagnetic exchange coupled, while the bulk magnetization remains unchanged. The emergent interfacial antiferromagnetic interactions are attributed to modulations of the strong double-exchange interaction between conducting electron spins and local magnetic moments. The results will help promote the development of new interface-based functionalities and device concepts.

Original languageEnglish (US)
Article number04F101
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume35
Issue number4
DOIs
StatePublished - Jul 1 2017

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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