Current-driven interface magnetic transition in complex oxide heterostructure

F. Fang; H. Zhai; X. Ma; Y. W. Yin; Qi Li; G. Lüpke

doi:10.1116/1.4976587

Current-driven interface magnetic transition in complex oxide heterostructure

F. Fang, H. Zhai, X. Ma, Y. W. Yin, Qi Li, G. Lüpke

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Abstract

The interfacial spin state of n-type BaTiO₃/La_0.5Ca_0.5MnO₃/La_0.7Sr_0.3MnO₃ heterojunction and its dependence on gate voltage is investigated with magnetic second-harmonic generation at 78 K. The injection of minority spins alters the interface magnetization of La_0.7Sr_0.3MnO₃ from ferromagnetic to antiferromagnetic exchange coupled, while the bulk magnetization remains unchanged. The emergent interfacial antiferromagnetic interactions are attributed to modulations of the strong double-exchange interaction between conducting electron spins and local magnetic moments. The results will help promote the development of new interface-based functionalities and device concepts.

Original language	English (US)
Article number	04F101
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	35
Issue number	4
DOIs	https://doi.org/10.1116/1.4976587
State	Published - Jul 1 2017

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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title = "Current-driven interface magnetic transition in complex oxide heterostructure",

abstract = "The interfacial spin state of n-type BaTiO3/La0.5Ca0.5MnO3/La0.7Sr0.3MnO3 heterojunction and its dependence on gate voltage is investigated with magnetic second-harmonic generation at 78 K. The injection of minority spins alters the interface magnetization of La0.7Sr0.3MnO3 from ferromagnetic to antiferromagnetic exchange coupled, while the bulk magnetization remains unchanged. The emergent interfacial antiferromagnetic interactions are attributed to modulations of the strong double-exchange interaction between conducting electron spins and local magnetic moments. The results will help promote the development of new interface-based functionalities and device concepts.",

author = "F. Fang and H. Zhai and X. Ma and Yin, {Y. W.} and Qi Li and G. L{\"u}pke",

note = "Funding Information: The MSHG experiments, data analysis, and discussions performed at College of William and Mary were supported by the Department of Energy (Grant No. DE-FG02-04ER46127). The work at Pennsylvania State University (PSU) was supported in part by the DOE (Grant No. DE-FG02-08ER4653) and the NSF (Grant No. DMR-1207474). Publisher Copyright: {\textcopyright} 2017 American Vacuum Society.",

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doi = "10.1116/1.4976587",

language = "English (US)",

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TY - JOUR

T1 - Current-driven interface magnetic transition in complex oxide heterostructure

AU - Fang, F.

AU - Zhai, H.

AU - Ma, X.

AU - Yin, Y. W.

AU - Li, Qi

AU - Lüpke, G.

N1 - Funding Information: The MSHG experiments, data analysis, and discussions performed at College of William and Mary were supported by the Department of Energy (Grant No. DE-FG02-04ER46127). The work at Pennsylvania State University (PSU) was supported in part by the DOE (Grant No. DE-FG02-08ER4653) and the NSF (Grant No. DMR-1207474). Publisher Copyright: © 2017 American Vacuum Society.

PY - 2017/7/1

Y1 - 2017/7/1

N2 - The interfacial spin state of n-type BaTiO3/La0.5Ca0.5MnO3/La0.7Sr0.3MnO3 heterojunction and its dependence on gate voltage is investigated with magnetic second-harmonic generation at 78 K. The injection of minority spins alters the interface magnetization of La0.7Sr0.3MnO3 from ferromagnetic to antiferromagnetic exchange coupled, while the bulk magnetization remains unchanged. The emergent interfacial antiferromagnetic interactions are attributed to modulations of the strong double-exchange interaction between conducting electron spins and local magnetic moments. The results will help promote the development of new interface-based functionalities and device concepts.

AB - The interfacial spin state of n-type BaTiO3/La0.5Ca0.5MnO3/La0.7Sr0.3MnO3 heterojunction and its dependence on gate voltage is investigated with magnetic second-harmonic generation at 78 K. The injection of minority spins alters the interface magnetization of La0.7Sr0.3MnO3 from ferromagnetic to antiferromagnetic exchange coupled, while the bulk magnetization remains unchanged. The emergent interfacial antiferromagnetic interactions are attributed to modulations of the strong double-exchange interaction between conducting electron spins and local magnetic moments. The results will help promote the development of new interface-based functionalities and device concepts.

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JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

IS - 4

M1 - 04F101

ER -

Current-driven interface magnetic transition in complex oxide heterostructure

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