Current limitation after pinch-off in AlGaN/GaN FETs

R. Dietrich, A. Wieszt, A. Vescan, H. Leier, Joan M. Redwing, Karim S. Boutros, K. Kornitzer, R. Freitag, T. Ebner, K. Thonke

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7 Scopus citations

Abstract

Piezoelectric AlGaN/GaN FETs on SiC with high carrier mobility have been fabricated yielding IDS=450 mA/mm and gm=200 mS/mm. In the on-state, under UV-illumination, the devices sustain a drain voltage of V DS=49 V, corresponding to a power dissipation of 26.5 W/mm. On turn-on of the device from the pinch-off state, a significant delay in the drain current build-up is observed. This effect depends on the pinch-off time and the pinch-off voltage and can be removed by either a brief UV-illumination or a VDS>25 V applied in the on-state. The drain current transients are characterized by a relaxation time τ, which is in the order of several hundred seconds. From the temperature dependence of τ, an activation energy of about 280 meV and a capture cross section of 4.4.10-18 cm 2 were determined. The devices show pronounced persistent photoconductivity (PPC) and the drain current ID is sensitive to illumination.

Original languageEnglish (US)
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume5
DOIs
StatePublished - 2000

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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