Current transport in GaAs Schottky barrier diodes subject to high neutron fluence

S. Ashok, J. M. Borrego, R. J. Gutmann

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

The electrical characteristics of GaAs Schottky barrier diodes are investigated after fast-neutron irradiation at fluences causing appreciable (≳75%) carrier removal. A significant change is seen in the forward current-voltage (I-V) characteristics, with one-carrier space-charge-limited (SCL) current in the presence of distributed traps becoming the dominant conduction mechanism. Depending on preirradiation doping level and neutron fluence, both power law and exponential forward I-V characteristics are obtained, signifying exponential and uniform trap distributions respectively. The trap parameters are evaluated from analysis of I-V data taken over a wide temperature range.

Original languageEnglish (US)
Pages (from-to)1076-1084
Number of pages9
JournalJournal of Applied Physics
Volume51
Issue number2
DOIs
StatePublished - 1980

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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