Current-voltage characteristics and charge-carrier traps in N-Type 4H-SiC schottky structures

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Because of their high switching speeds and low power losses, metal-SiC Schottky-barrier diodes (SBD) are important to high performance, high temperature, and high frequency applications in power electronics. The use of 4H-SiC in SBDs is particularly advantageous because it has higher electron mobility than other SiC polytypes. In this work we examine current-capacitance- voltage-temperature properties of Ti on 4H-SiC SBDs and develop fitting algorithms to extract diode parameters based on inhomogeneous barrier height analysis approaches. Also the quality of 4H-SiC is evaluated in terms of electrically active defects: this part of the work utilizes Fourier-transform deep level transient spectroscopy (FT-DLTS) to probe carrier traps. FT-DLTS reveals the presence of an electron trap located in energy at ∼0.6 eV below the conduction band edge. This electron trap possesses a large capture cross section for electrons of the order of 10-12 cm2 which suggests that the electron capture is Coulombic and the associated charge transition in the defect is between positive and neutral states.

Original languageEnglish (US)
Title of host publicationExtended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06
PublisherIEEE Computer Society
Pages250-253
Number of pages4
ISBN (Print)1424400473, 9781424400478
DOIs
StatePublished - 2006
EventExtended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06 - Shanghai, China
Duration: May 15 2006May 16 2006

Publication series

NameExtended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06

Other

OtherExtended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06
CountryChina
CityShanghai
Period5/15/065/16/06

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Surfaces and Interfaces

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