Current-voltage characteristics of poled ferroelectric tunnel junction have been theoretically studied with the consideration of piezoelectric effect and interface potential due to the depolarization effect. Compared with piezoelectric effect, barrier potential changed by polarization switching is more significant. Tunnel currents with low and high resistances during the reading process are distinct, which have potential applications as low-cost, high-density, and fast-speed ferroelectric memories. The obtained ON/OFF ratio in a symmetry SrRuO 3/BaTiO 3/SrRuO 3 structure is around 50 under a small applied voltage.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)