Damage to n-mOSFETs from electrical stress relationship to processing damage and impact on device reliability

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The study reported herein examines and compares damage to n-channel and p-channel metal-oxide-silicon field-effect transistors (MOSFETs) from direct current (d.c.) and alternating current (a.c.) electrical stresses as well as the relationship of this damage to plasma processing damage in MOS-FETs. The lightly-doped drain (LDD) MOSFETs used are of 0.5 μm channel length and with a 90 Å thick thermally grown gate oxide fabricated using a full flow CMOS process up to and including metal-1 processes and post-metallization annealing (PMA). The damage to MOSFETs is assessed using transistor parameter characterization and charge-to-breakdown measurements on the gate oxide. It is found that manifestations of d.c. stress-induced damage and a.c. stress-induced damage to transistors are fairly similar in that both forms of damage are passivated by PMA and are reactivated by a subsequent d.c. electrical stress. However, a.c. stress-induced damage is observed to occur at much lower electric fields across the gate oxide than those necessary for d.c. stress-induced damage to be significant. This is attributed to a.c. currents, caused by carrier hopping, occurring at relatively low electric fields. One implication of our results is that plasma-charging damage, often attributed to d.c. electrical stress alone, may comprise an a.c. electrical stress component too.

Original languageEnglish (US)
Pages (from-to)651-657
Number of pages7
JournalMicroelectronics Reliability
Volume38
Issue number4
DOIs
StatePublished - Jan 1 1998

Fingerprint

damage
Processing
Field effect transistors
alternating current
Silicon oxides
silicon transistors
Metals
direct current
Oxides
field effect transistors
metal oxides
Metallizing
Transistors
Electric fields
Annealing
oxides
Plasma applications
transistors
annealing
electric fields

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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title = "Damage to n-mOSFETs from electrical stress relationship to processing damage and impact on device reliability",
abstract = "The study reported herein examines and compares damage to n-channel and p-channel metal-oxide-silicon field-effect transistors (MOSFETs) from direct current (d.c.) and alternating current (a.c.) electrical stresses as well as the relationship of this damage to plasma processing damage in MOS-FETs. The lightly-doped drain (LDD) MOSFETs used are of 0.5 μm channel length and with a 90 {\AA} thick thermally grown gate oxide fabricated using a full flow CMOS process up to and including metal-1 processes and post-metallization annealing (PMA). The damage to MOSFETs is assessed using transistor parameter characterization and charge-to-breakdown measurements on the gate oxide. It is found that manifestations of d.c. stress-induced damage and a.c. stress-induced damage to transistors are fairly similar in that both forms of damage are passivated by PMA and are reactivated by a subsequent d.c. electrical stress. However, a.c. stress-induced damage is observed to occur at much lower electric fields across the gate oxide than those necessary for d.c. stress-induced damage to be significant. This is attributed to a.c. currents, caused by carrier hopping, occurring at relatively low electric fields. One implication of our results is that plasma-charging damage, often attributed to d.c. electrical stress alone, may comprise an a.c. electrical stress component too.",
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Damage to n-mOSFETs from electrical stress relationship to processing damage and impact on device reliability. / Trabzon, L.; Awadelkarim, Osama O.

In: Microelectronics Reliability, Vol. 38, No. 4, 01.01.1998, p. 651-657.

Research output: Contribution to journalArticle

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