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Dangling bond defects in SiC: An ab initio study
Blair R. Tuttle
School of Science (Behrend)
Institute for Computational and Data Sciences (ICDS)
Research output
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Contribution to journal
›
Article
›
peer-review
8
Scopus citations
Overview
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Engineering & Materials Science
Dangling bonds
100%
Defects
37%
Vacancies
14%
Crystalline materials
11%
Hydrogen
8%
Carbon
8%
Experiments
3%
Chemical Compounds
Dangling Bond
72%
Nanoporosity
12%
Alloy
9%
Hydrogen
6%
Carbon Atom
6%
Physics & Astronomy
defects
30%
isolation
10%
functionals
10%
leakage
9%
carbon
7%
hydrogen
6%
matrices
6%