DANGLING BONDS AND SUB-GAP OPTICAL ABSORPTION IN SILICON.

C. H. Seager, Patrick M. Lenahan, K. L. Brower, R. E. Mikawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The silicon 'dangling bond' defect plays a large part in controlling the electronic properties of a-Si, polycrystalline silicon, and the Si/SiO//2 interface. Jackson et al. have suggested that transitions of electrons occupying this defect produce the Urbach-like sub-gap absorption tail seen in two of these materials. We have peformed optical and electron spin resonance measurements on polycrystalline silicon, plastically deformed silicon, and Si/SiO//2 interfaces to examine this contention. In addition to seeing no measurable absorptance due to dangling bond interface states in the latter system, we conclude from the poor correlation of ESR signals with optical data that the Urbach tail in polycrystalline and deformed silicon is not due to transitions of dangling bond electrons.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsNoble M. Johnson, Stephen G. Bishop, George D. Watkins
PublisherMaterials Research Soc
Pages539-544
Number of pages6
Volume46
ISBN (Print)0931837111
StatePublished - Dec 1 1985

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Dangling bonds
Silicon
Light absorption
optical absorption
Electron transitions
Polysilicon
Paramagnetic resonance
silicon
Defects
Electrons
Interface states
Electronic properties
absorptance
defects
electron paramagnetic resonance
electrons
electronics

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Seager, C. H., Lenahan, P. M., Brower, K. L., & Mikawa, R. E. (1985). DANGLING BONDS AND SUB-GAP OPTICAL ABSORPTION IN SILICON. In N. M. Johnson, S. G. Bishop, & G. D. Watkins (Eds.), Materials Research Society Symposia Proceedings (Vol. 46, pp. 539-544). Materials Research Soc.
Seager, C. H. ; Lenahan, Patrick M. ; Brower, K. L. ; Mikawa, R. E. / DANGLING BONDS AND SUB-GAP OPTICAL ABSORPTION IN SILICON. Materials Research Society Symposia Proceedings. editor / Noble M. Johnson ; Stephen G. Bishop ; George D. Watkins. Vol. 46 Materials Research Soc, 1985. pp. 539-544
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Seager, CH, Lenahan, PM, Brower, KL & Mikawa, RE 1985, DANGLING BONDS AND SUB-GAP OPTICAL ABSORPTION IN SILICON. in NM Johnson, SG Bishop & GD Watkins (eds), Materials Research Society Symposia Proceedings. vol. 46, Materials Research Soc, pp. 539-544.

DANGLING BONDS AND SUB-GAP OPTICAL ABSORPTION IN SILICON. / Seager, C. H.; Lenahan, Patrick M.; Brower, K. L.; Mikawa, R. E.

Materials Research Society Symposia Proceedings. ed. / Noble M. Johnson; Stephen G. Bishop; George D. Watkins. Vol. 46 Materials Research Soc, 1985. p. 539-544.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Seager CH, Lenahan PM, Brower KL, Mikawa RE. DANGLING BONDS AND SUB-GAP OPTICAL ABSORPTION IN SILICON. In Johnson NM, Bishop SG, Watkins GD, editors, Materials Research Society Symposia Proceedings. Vol. 46. Materials Research Soc. 1985. p. 539-544