C. H. Seager, Patrick M. Lenahan, K. L. Brower, R. E. Mikawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The silicon 'dangling bond' defect plays a large part in controlling the electronic properties of a-Si, polycrystalline silicon, and the Si/SiO//2 interface. Jackson et al. have suggested that transitions of electrons occupying this defect produce the Urbach-like sub-gap absorption tail seen in two of these materials. We have peformed optical and electron spin resonance measurements on polycrystalline silicon, plastically deformed silicon, and Si/SiO//2 interfaces to examine this contention. In addition to seeing no measurable absorptance due to dangling bond interface states in the latter system, we conclude from the poor correlation of ESR signals with optical data that the Urbach tail in polycrystalline and deformed silicon is not due to transitions of dangling bond electrons.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsNoble M. Johnson, Stephen G. Bishop, George D. Watkins
PublisherMaterials Research Soc
Number of pages6
ISBN (Print)0931837111
StatePublished - Dec 1 1985

Publication series

NameMaterials Research Society Symposia Proceedings
ISSN (Print)0272-9172

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Seager, C. H., Lenahan, P. M., Brower, K. L., & Mikawa, R. E. (1985). DANGLING BONDS AND SUB-GAP OPTICAL ABSORPTION IN SILICON. In N. M. Johnson, S. G. Bishop, & G. D. Watkins (Eds.), Materials Research Society Symposia Proceedings (pp. 539-544). (Materials Research Society Symposia Proceedings; Vol. 46). Materials Research Soc.