dc ANALYSIS AND DESIGN OF THE MAJORITY CARRIER ACCUMULATION MOSFET.

Pierre E. Schmidt, Mukunda B. Das, Paul D. Esqueda

Research output: Contribution to journalArticlepeer-review

Abstract

A novel MOSFET device structure is proposed that operates on the principle of majority carrier accumulation in the channel. For an n-channel device, the structure consists of a thin n-type layer on a p-type substrate. By appropriate choice of the n-layer thickness and the donor and acceptor concentrations the n-layer can be completely depleted due to the built-in junction potential or if necessary by applying a suitable substrate bias. The dc current-voltage characteristics are calculated using the depletion approximation.

Original languageEnglish (US)
Pages (from-to)531-540
Number of pages10
JournalInternational Journal of Electronics
Volume54
Issue number4
DOIs
StatePublished - 1983

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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