A novel MOSFET device structure is proposed that operates on the principle of majority carrier accumulation in the channel. For an n-channel device, the structure consists of a thin n-type layer on a p-type substrate. By appropriate choice of the n-layer thickness and the donor and acceptor concentrations the n-layer can be completely depleted due to the built-in junction potential or if necessary by applying a suitable substrate bias. The dc current-voltage characteristics are calculated using the depletion approximation.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering