Deep electron and hole traps in 6H-SiC bulk crystals grown by the halide chemical vapor deposition

S. W. Huh, A. Y. Polyakov, H. J. Chung, S. Nigam, M. Skowronski, E. R. Glaser, W. E. Carlos, Mark Andrew Fanton, N. B. Smirnov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Deep electron and hole traps were studied in a series of high purity 6H-SiC single crystals grown by Halide Chemical Vapor Deposition (HCVD) method at various C/Si flow ratios and at temperatures between 2000°C and 2100°C Characterization included Low Temperature Photoluminescence (LTPL), Deep Level Transient Spectroscopy (DLTS), Minority Carrier Transient Spectroscopy (MCTS), and Thermal Admittance Spectroscopy (TAS) measurements. Concentrations of all deep traps were shown to strongly decrease with increased C/Si flow ratio and with increased growth temperature. The results indicate that the majority of deep centers in 6H-SiC crystals grown by HCVD are due to native defects or complexes of native defects promoted by Si-rich growth conditions. The observed growth temperature dependence of residual donor concentration and traps density is explained by increasing the effective C/Si ratio at higher temperatures for the same nominal ratio of C and Si flows.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
Pages497-500
Number of pages4
Volume527-529
EditionPART 1
StatePublished - 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: Sep 18 2005Sep 23 2005

Publication series

NameMaterials Science Forum
NumberPART 1
Volume527-529
ISSN (Print)02555476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

Fingerprint

Hole traps
Electron traps
Chemical vapor deposition
Growth temperature
Crystals
Spectroscopy
Defects
Deep level transient spectroscopy
Temperature
Photoluminescence
Single crystals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Huh, S. W., Polyakov, A. Y., Chung, H. J., Nigam, S., Skowronski, M., Glaser, E. R., ... Smirnov, N. B. (2006). Deep electron and hole traps in 6H-SiC bulk crystals grown by the halide chemical vapor deposition. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005 (PART 1 ed., Vol. 527-529, pp. 497-500). (Materials Science Forum; Vol. 527-529, No. PART 1).
Huh, S. W. ; Polyakov, A. Y. ; Chung, H. J. ; Nigam, S. ; Skowronski, M. ; Glaser, E. R. ; Carlos, W. E. ; Fanton, Mark Andrew ; Smirnov, N. B. / Deep electron and hole traps in 6H-SiC bulk crystals grown by the halide chemical vapor deposition. Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. Vol. 527-529 PART 1. ed. 2006. pp. 497-500 (Materials Science Forum; PART 1).
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abstract = "Deep electron and hole traps were studied in a series of high purity 6H-SiC single crystals grown by Halide Chemical Vapor Deposition (HCVD) method at various C/Si flow ratios and at temperatures between 2000°C and 2100°C Characterization included Low Temperature Photoluminescence (LTPL), Deep Level Transient Spectroscopy (DLTS), Minority Carrier Transient Spectroscopy (MCTS), and Thermal Admittance Spectroscopy (TAS) measurements. Concentrations of all deep traps were shown to strongly decrease with increased C/Si flow ratio and with increased growth temperature. The results indicate that the majority of deep centers in 6H-SiC crystals grown by HCVD are due to native defects or complexes of native defects promoted by Si-rich growth conditions. The observed growth temperature dependence of residual donor concentration and traps density is explained by increasing the effective C/Si ratio at higher temperatures for the same nominal ratio of C and Si flows.",
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Huh, SW, Polyakov, AY, Chung, HJ, Nigam, S, Skowronski, M, Glaser, ER, Carlos, WE, Fanton, MA & Smirnov, NB 2006, Deep electron and hole traps in 6H-SiC bulk crystals grown by the halide chemical vapor deposition. in Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 edn, vol. 527-529, Materials Science Forum, no. PART 1, vol. 527-529, pp. 497-500, International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005), Pittsburgh, PA, United States, 9/18/05.

Deep electron and hole traps in 6H-SiC bulk crystals grown by the halide chemical vapor deposition. / Huh, S. W.; Polyakov, A. Y.; Chung, H. J.; Nigam, S.; Skowronski, M.; Glaser, E. R.; Carlos, W. E.; Fanton, Mark Andrew; Smirnov, N. B.

Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. Vol. 527-529 PART 1. ed. 2006. p. 497-500 (Materials Science Forum; Vol. 527-529, No. PART 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Huh, S. W.

AU - Polyakov, A. Y.

AU - Chung, H. J.

AU - Nigam, S.

AU - Skowronski, M.

AU - Glaser, E. R.

AU - Carlos, W. E.

AU - Fanton, Mark Andrew

AU - Smirnov, N. B.

PY - 2006

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N2 - Deep electron and hole traps were studied in a series of high purity 6H-SiC single crystals grown by Halide Chemical Vapor Deposition (HCVD) method at various C/Si flow ratios and at temperatures between 2000°C and 2100°C Characterization included Low Temperature Photoluminescence (LTPL), Deep Level Transient Spectroscopy (DLTS), Minority Carrier Transient Spectroscopy (MCTS), and Thermal Admittance Spectroscopy (TAS) measurements. Concentrations of all deep traps were shown to strongly decrease with increased C/Si flow ratio and with increased growth temperature. The results indicate that the majority of deep centers in 6H-SiC crystals grown by HCVD are due to native defects or complexes of native defects promoted by Si-rich growth conditions. The observed growth temperature dependence of residual donor concentration and traps density is explained by increasing the effective C/Si ratio at higher temperatures for the same nominal ratio of C and Si flows.

AB - Deep electron and hole traps were studied in a series of high purity 6H-SiC single crystals grown by Halide Chemical Vapor Deposition (HCVD) method at various C/Si flow ratios and at temperatures between 2000°C and 2100°C Characterization included Low Temperature Photoluminescence (LTPL), Deep Level Transient Spectroscopy (DLTS), Minority Carrier Transient Spectroscopy (MCTS), and Thermal Admittance Spectroscopy (TAS) measurements. Concentrations of all deep traps were shown to strongly decrease with increased C/Si flow ratio and with increased growth temperature. The results indicate that the majority of deep centers in 6H-SiC crystals grown by HCVD are due to native defects or complexes of native defects promoted by Si-rich growth conditions. The observed growth temperature dependence of residual donor concentration and traps density is explained by increasing the effective C/Si ratio at higher temperatures for the same nominal ratio of C and Si flows.

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BT - Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005

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Huh SW, Polyakov AY, Chung HJ, Nigam S, Skowronski M, Glaser ER et al. Deep electron and hole traps in 6H-SiC bulk crystals grown by the halide chemical vapor deposition. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 ed. Vol. 527-529. 2006. p. 497-500. (Materials Science Forum; PART 1).