Deep electron and hole traps in 6H-SiC bulk crystals grown by the halide chemical vapor deposition

S. W. Huh, A. Y. Polyakov, H. J. Chung, S. Nigam, M. Skowronski, E. R. Glaser, W. E. Carlos, M. A. Fanton, N. B. Smirnov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Deep electron and hole traps were studied in a series of high purity 6H-SiC single crystals grown by Halide Chemical Vapor Deposition (HCVD) method at various C/Si flow ratios and at temperatures between 2000°C and 2100°C Characterization included Low Temperature Photoluminescence (LTPL), Deep Level Transient Spectroscopy (DLTS), Minority Carrier Transient Spectroscopy (MCTS), and Thermal Admittance Spectroscopy (TAS) measurements. Concentrations of all deep traps were shown to strongly decrease with increased C/Si flow ratio and with increased growth temperature. The results indicate that the majority of deep centers in 6H-SiC crystals grown by HCVD are due to native defects or complexes of native defects promoted by Si-rich growth conditions. The observed growth temperature dependence of residual donor concentration and traps density is explained by increasing the effective C/Si ratio at higher temperatures for the same nominal ratio of C and Si flows.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
PublisherTrans Tech Publications Ltd
Pages497-500
Number of pages4
EditionPART 1
ISBN (Print)9780878494255
DOIs
StatePublished - Jan 1 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: Sep 18 2005Sep 23 2005

Publication series

NameMaterials Science Forum
NumberPART 1
Volume527-529
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Huh, S. W., Polyakov, A. Y., Chung, H. J., Nigam, S., Skowronski, M., Glaser, E. R., Carlos, W. E., Fanton, M. A., & Smirnov, N. B. (2006). Deep electron and hole traps in 6H-SiC bulk crystals grown by the halide chemical vapor deposition. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005 (PART 1 ed., pp. 497-500). (Materials Science Forum; Vol. 527-529, No. PART 1). Trans Tech Publications Ltd. https://doi.org/10.4028/0-87849-425-1.497