Deep level defects involved in MOS device instabilities

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The physical and chemical nature of several defects involved in metal-oxide-silicon (MOS) device instabilities have become fairly well understood through studies involving electron paramagnetic resonance (EPR). Recent EPR studies suggest that some of these defects play important roles in the negative bias temperature instability (NBTI). This paper reviews recent NBTI EPR studies as well as earlier EPR studies dealing with other MOS instability problems.

Original languageEnglish (US)
Pages (from-to)890-898
Number of pages9
JournalMicroelectronics Reliability
Volume47
Issue number6
DOIs
StatePublished - Jun 1 2007

Fingerprint

Silicon oxides
metal oxides
Paramagnetic resonance
electron paramagnetic resonance
Metals
Defects
defects
silicon
temperature
Negative bias temperature instability

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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abstract = "The physical and chemical nature of several defects involved in metal-oxide-silicon (MOS) device instabilities have become fairly well understood through studies involving electron paramagnetic resonance (EPR). Recent EPR studies suggest that some of these defects play important roles in the negative bias temperature instability (NBTI). This paper reviews recent NBTI EPR studies as well as earlier EPR studies dealing with other MOS instability problems.",
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Deep level defects involved in MOS device instabilities. / Lenahan, P. M.

In: Microelectronics Reliability, Vol. 47, No. 6, 01.06.2007, p. 890-898.

Research output: Contribution to journalArticle

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