Abstract
The physical and chemical nature of several defects involved in metal-oxide-silicon (MOS) device instabilities have become fairly well understood through studies involving electron paramagnetic resonance (EPR). Recent EPR studies suggest that some of these defects play important roles in the negative bias temperature instability (NBTI). This paper reviews recent NBTI EPR studies as well as earlier EPR studies dealing with other MOS instability problems.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 890-898 |
| Number of pages | 9 |
| Journal | Microelectronics Reliability |
| Volume | 47 |
| Issue number | 6 |
| DOIs | |
| State | Published - Jun 1 2007 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Safety, Risk, Reliability and Quality
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
Cite this
}
Deep level defects involved in MOS device instabilities. / Lenahan, P. M.
In: Microelectronics Reliability, Vol. 47, No. 6, 01.06.2007, p. 890-898.Research output: Contribution to journal › Article
TY - JOUR
T1 - Deep level defects involved in MOS device instabilities
AU - Lenahan, P. M.
PY - 2007/6/1
Y1 - 2007/6/1
N2 - The physical and chemical nature of several defects involved in metal-oxide-silicon (MOS) device instabilities have become fairly well understood through studies involving electron paramagnetic resonance (EPR). Recent EPR studies suggest that some of these defects play important roles in the negative bias temperature instability (NBTI). This paper reviews recent NBTI EPR studies as well as earlier EPR studies dealing with other MOS instability problems.
AB - The physical and chemical nature of several defects involved in metal-oxide-silicon (MOS) device instabilities have become fairly well understood through studies involving electron paramagnetic resonance (EPR). Recent EPR studies suggest that some of these defects play important roles in the negative bias temperature instability (NBTI). This paper reviews recent NBTI EPR studies as well as earlier EPR studies dealing with other MOS instability problems.
UR - http://www.scopus.com/inward/record.url?scp=34247897087&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34247897087&partnerID=8YFLogxK
U2 - 10.1016/j.microrel.2006.10.016
DO - 10.1016/j.microrel.2006.10.016
M3 - Article
AN - SCOPUS:34247897087
VL - 47
SP - 890
EP - 898
JO - Microelectronics and Reliability
JF - Microelectronics and Reliability
SN - 0026-2714
IS - 6
ER -