Deep level defects involved in MOS device instabilities

P. M. Lenahan

doi:10.1016/j.microrel.2006.10.016

Deep level defects involved in MOS device instabilities

P. M. Lenahan

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The physical and chemical nature of several defects involved in metal-oxide-silicon (MOS) device instabilities have become fairly well understood through studies involving electron paramagnetic resonance (EPR). Recent EPR studies suggest that some of these defects play important roles in the negative bias temperature instability (NBTI). This paper reviews recent NBTI EPR studies as well as earlier EPR studies dealing with other MOS instability problems.

Original language	English (US)
Pages (from-to)	890-898
Number of pages	9
Journal	Microelectronics Reliability
Volume	47
Issue number	6
DOIs	https://doi.org/10.1016/j.microrel.2006.10.016
State	Published - Jun 1 2007

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Safety, Risk, Reliability and Quality
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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abstract = "The physical and chemical nature of several defects involved in metal-oxide-silicon (MOS) device instabilities have become fairly well understood through studies involving electron paramagnetic resonance (EPR). Recent EPR studies suggest that some of these defects play important roles in the negative bias temperature instability (NBTI). This paper reviews recent NBTI EPR studies as well as earlier EPR studies dealing with other MOS instability problems.",

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