Deep level defects which limit current gain in 4H SiC bipolar junction transistors

C. J. Cochrane, Patrick M. Lenahan, A. J. Lelis

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Abstract

The authors employ a very sensitive electrically detected electron spin resonance technique called spin dependent recombination to observe recombination centers in fully processed 4H SiC n-p-n bipolar junction transistors. Their measurements indicate that the observed dominating recombination defect in these transistors is an intrinsic center of high symmetry, most likely a vacancy. This defect likely plays a dominating role in limiting the current gain in these 4H SiC devices.

Original languageEnglish (US)
Article number123501
JournalApplied Physics Letters
Volume90
Issue number12
DOIs
Publication statusPublished - Mar 30 2007

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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