Deep traps in high resistivity AlGaN films

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, J. M. Redwing

Research output: Contribution to journalArticle

57 Scopus citations

Abstract

Deep levels were studied in undoped high resistivity Alx-Ga1-xN films grown by metal organic chemical vapor deposition on sapphire. Strong temperature quenching of photocurrent was observed and explained by the presence of hole traps with energies ranging from 0.2 to 0.36 eV for AlGaN compositions in the range 0.05 < x < 0.25. Similar hole traps were detected by means of photoinduced current transient spectroscopy (PICTS) which also revealed the presence of additional hole traps situated 0.85-1.0 eV above the top of the valence band.

Original languageEnglish (US)
Pages (from-to)831-838
Number of pages8
JournalSolid-State Electronics
Volume42
Issue number5
DOIs
StatePublished - May 6 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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