Deep UV ablation of PMMA resists

Michael T. Lanagan, S. Lindsey, N. S. Viswanathan

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Deep UV exposure of Polymethyl methacrylate resist systems has been investigated in the spectral region 220–250 nm using a special deep UV light source. The ablation of PMMA resist follows a quantitative exponential relation and is independent of molecular weight and substrates. The erosion rates at higher temperatures show a dependence on the Tg of the PMMA. The ablation suggests depolymerization reactions in PMMA concurrent to chain scission. Reaction pathways in deep UV degradation are different from electron beam and ion beam degradations of PMMA.

Original languageEnglish (US)
Pages (from-to)L67-L69
JournalJapanese Journal of Applied Physics
Volume22
Issue number2
DOIs
StatePublished - Jan 1 1983

Fingerprint

Ablation
ablation
degradation
depolymerization
Degradation
Depolymerization
Polymethyl methacrylates
polymethyl methacrylate
Ultraviolet radiation
Ion beams
erosion
cleavage
Erosion
Electron beams
molecular weight
light sources
Molecular weight
ion beams
electron beams
Substrates

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Lanagan, Michael T. ; Lindsey, S. ; Viswanathan, N. S. / Deep UV ablation of PMMA resists. In: Japanese Journal of Applied Physics. 1983 ; Vol. 22, No. 2. pp. L67-L69.
@article{f7d24f95f54b437b85e876fc6ef09024,
title = "Deep UV ablation of PMMA resists",
abstract = "Deep UV exposure of Polymethyl methacrylate resist systems has been investigated in the spectral region 220–250 nm using a special deep UV light source. The ablation of PMMA resist follows a quantitative exponential relation and is independent of molecular weight and substrates. The erosion rates at higher temperatures show a dependence on the Tg of the PMMA. The ablation suggests depolymerization reactions in PMMA concurrent to chain scission. Reaction pathways in deep UV degradation are different from electron beam and ion beam degradations of PMMA.",
author = "Lanagan, {Michael T.} and S. Lindsey and Viswanathan, {N. S.}",
year = "1983",
month = "1",
day = "1",
doi = "10.1143/JJAP.22.L67",
language = "English (US)",
volume = "22",
pages = "L67--L69",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "2",

}

Deep UV ablation of PMMA resists. / Lanagan, Michael T.; Lindsey, S.; Viswanathan, N. S.

In: Japanese Journal of Applied Physics, Vol. 22, No. 2, 01.01.1983, p. L67-L69.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Deep UV ablation of PMMA resists

AU - Lanagan, Michael T.

AU - Lindsey, S.

AU - Viswanathan, N. S.

PY - 1983/1/1

Y1 - 1983/1/1

N2 - Deep UV exposure of Polymethyl methacrylate resist systems has been investigated in the spectral region 220–250 nm using a special deep UV light source. The ablation of PMMA resist follows a quantitative exponential relation and is independent of molecular weight and substrates. The erosion rates at higher temperatures show a dependence on the Tg of the PMMA. The ablation suggests depolymerization reactions in PMMA concurrent to chain scission. Reaction pathways in deep UV degradation are different from electron beam and ion beam degradations of PMMA.

AB - Deep UV exposure of Polymethyl methacrylate resist systems has been investigated in the spectral region 220–250 nm using a special deep UV light source. The ablation of PMMA resist follows a quantitative exponential relation and is independent of molecular weight and substrates. The erosion rates at higher temperatures show a dependence on the Tg of the PMMA. The ablation suggests depolymerization reactions in PMMA concurrent to chain scission. Reaction pathways in deep UV degradation are different from electron beam and ion beam degradations of PMMA.

UR - http://www.scopus.com/inward/record.url?scp=0020705143&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020705143&partnerID=8YFLogxK

U2 - 10.1143/JJAP.22.L67

DO - 10.1143/JJAP.22.L67

M3 - Article

VL - 22

SP - L67-L69

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 2

ER -