Defect-assisted heavily and substitutionally boron-doped thin multiwalled carbon nanotubes using high-temperature thermal diffusion

Yoong Ahm Kim, Shunta Aoki, Kazunori Fujisawa, Yong Il Ko, Kap Seung Yang, Cheol Min Yang, Yong Chae Jung, Takuya Hayashi, Morinobu Endo, Mauricio Terrones, Mildred S. Dresselhaus

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Carbon nanotubes have shown great potential as conductive fillers in various composites, macro-assembled fibers, and transparent conductive films due to their superior electrical conductivity. Here, we present an effective defect engineering strategy for improving the intrinsic electrical conductivity of nanotube assemblies by thermally incorporating a large number of boron atoms into substitutional positions within the hexagonal framework of the tubes. It was confirmed that the defects introduced after vacuum ultraviolet and nitrogen plasma treatments facilitate the incorporation of a large number of boron atoms (ca. 0.496 atomic %) occupying the trigonal sites on the tube sidewalls during the boron doping process, thus eventually increasing the electrical conductivity of the carbon nanotube film. Our approach provides a potential solution for the industrial use of macro-structured nanotube assemblies, where properties, such as high electrical conductance, high transparency, and lightweight, are extremely important.

Original languageEnglish (US)
Pages (from-to)4454-4459
Number of pages6
JournalJournal of Physical Chemistry C
Volume118
Issue number8
DOIs
StatePublished - Feb 27 2014

Fingerprint

Boron
Thermal diffusion
Multiwalled carbon nanotubes (MWCN)
thermal diffusion
Carbon Nanotubes
boron
carbon nanotubes
Nanotubes
Defects
assemblies
electrical resistivity
Macros
Carbon nanotubes
nanotubes
defects
tubes
Nitrogen plasma
Atoms
Conductive films
nitrogen plasma

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Cite this

Kim, Yoong Ahm ; Aoki, Shunta ; Fujisawa, Kazunori ; Ko, Yong Il ; Yang, Kap Seung ; Yang, Cheol Min ; Jung, Yong Chae ; Hayashi, Takuya ; Endo, Morinobu ; Terrones, Mauricio ; Dresselhaus, Mildred S. / Defect-assisted heavily and substitutionally boron-doped thin multiwalled carbon nanotubes using high-temperature thermal diffusion. In: Journal of Physical Chemistry C. 2014 ; Vol. 118, No. 8. pp. 4454-4459.
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abstract = "Carbon nanotubes have shown great potential as conductive fillers in various composites, macro-assembled fibers, and transparent conductive films due to their superior electrical conductivity. Here, we present an effective defect engineering strategy for improving the intrinsic electrical conductivity of nanotube assemblies by thermally incorporating a large number of boron atoms into substitutional positions within the hexagonal framework of the tubes. It was confirmed that the defects introduced after vacuum ultraviolet and nitrogen plasma treatments facilitate the incorporation of a large number of boron atoms (ca. 0.496 atomic {\%}) occupying the trigonal sites on the tube sidewalls during the boron doping process, thus eventually increasing the electrical conductivity of the carbon nanotube film. Our approach provides a potential solution for the industrial use of macro-structured nanotube assemblies, where properties, such as high electrical conductance, high transparency, and lightweight, are extremely important.",
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Kim, YA, Aoki, S, Fujisawa, K, Ko, YI, Yang, KS, Yang, CM, Jung, YC, Hayashi, T, Endo, M, Terrones, M & Dresselhaus, MS 2014, 'Defect-assisted heavily and substitutionally boron-doped thin multiwalled carbon nanotubes using high-temperature thermal diffusion', Journal of Physical Chemistry C, vol. 118, no. 8, pp. 4454-4459. https://doi.org/10.1021/jp410732r

Defect-assisted heavily and substitutionally boron-doped thin multiwalled carbon nanotubes using high-temperature thermal diffusion. / Kim, Yoong Ahm; Aoki, Shunta; Fujisawa, Kazunori; Ko, Yong Il; Yang, Kap Seung; Yang, Cheol Min; Jung, Yong Chae; Hayashi, Takuya; Endo, Morinobu; Terrones, Mauricio; Dresselhaus, Mildred S.

In: Journal of Physical Chemistry C, Vol. 118, No. 8, 27.02.2014, p. 4454-4459.

Research output: Contribution to journalArticle

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T1 - Defect-assisted heavily and substitutionally boron-doped thin multiwalled carbon nanotubes using high-temperature thermal diffusion

AU - Kim, Yoong Ahm

AU - Aoki, Shunta

AU - Fujisawa, Kazunori

AU - Ko, Yong Il

AU - Yang, Kap Seung

AU - Yang, Cheol Min

AU - Jung, Yong Chae

AU - Hayashi, Takuya

AU - Endo, Morinobu

AU - Terrones, Mauricio

AU - Dresselhaus, Mildred S.

PY - 2014/2/27

Y1 - 2014/2/27

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AB - Carbon nanotubes have shown great potential as conductive fillers in various composites, macro-assembled fibers, and transparent conductive films due to their superior electrical conductivity. Here, we present an effective defect engineering strategy for improving the intrinsic electrical conductivity of nanotube assemblies by thermally incorporating a large number of boron atoms into substitutional positions within the hexagonal framework of the tubes. It was confirmed that the defects introduced after vacuum ultraviolet and nitrogen plasma treatments facilitate the incorporation of a large number of boron atoms (ca. 0.496 atomic %) occupying the trigonal sites on the tube sidewalls during the boron doping process, thus eventually increasing the electrical conductivity of the carbon nanotube film. Our approach provides a potential solution for the industrial use of macro-structured nanotube assemblies, where properties, such as high electrical conductance, high transparency, and lightweight, are extremely important.

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