Defect chemistry and electronic transport in low-κ dielectrics studied with electrically detected magnetic resonance

Michael J. Mutch, Patrick M. Lenahan, Sean W. King

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Defect mediated electronic transport phenomena in low-κ dielectric films are of great technological interest for state-of-the-art and next generation microprocessors. At the present time, the leading low-κ interlayer dielectrics and etch-stop layers are based upon a-SiOC:H and a-SiCN:H, respectively. In this study, we utilize electrically detected magnetic resonance (EDMR), a derivative of electron paramagnetic resonance, to provide physical insight into electronic transport, as well as the nature and origin of defects in dense and porous a-SiOC:H and dense a-SiCN:H films. Resonance measurements are performed before and after the removal of sacrificial porogens via UV treatments to understand the role of specific defect centers in electronic transport in a-SiOC:H systems, and the nature of defects created by UV treatments. Unfortunately, a-SiOC:H and a-SiCN:H EDMR spectra are relatively broad and featureless. These featureless spectra are consistent with fairly complex a-SiOC:H and a-SiCN:H systems. We argue that physical insight may be gleaned from featureless spectra via multiple frequency EDMR. Baseline multiple frequency EDMR measurements are performed in a-Si:H and a-C:H to illustrate the nature of line broadening mechanisms of silicon and carbon related defects.

Original languageEnglish (US)
Article number094102
JournalJournal of Applied Physics
Volume119
Issue number9
DOIs
StatePublished - Mar 7 2016

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magnetic resonance
chemistry
defects
electronics
microprocessors
interlayers
electron paramagnetic resonance
carbon
silicon

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "Defect mediated electronic transport phenomena in low-κ dielectric films are of great technological interest for state-of-the-art and next generation microprocessors. At the present time, the leading low-κ interlayer dielectrics and etch-stop layers are based upon a-SiOC:H and a-SiCN:H, respectively. In this study, we utilize electrically detected magnetic resonance (EDMR), a derivative of electron paramagnetic resonance, to provide physical insight into electronic transport, as well as the nature and origin of defects in dense and porous a-SiOC:H and dense a-SiCN:H films. Resonance measurements are performed before and after the removal of sacrificial porogens via UV treatments to understand the role of specific defect centers in electronic transport in a-SiOC:H systems, and the nature of defects created by UV treatments. Unfortunately, a-SiOC:H and a-SiCN:H EDMR spectra are relatively broad and featureless. These featureless spectra are consistent with fairly complex a-SiOC:H and a-SiCN:H systems. We argue that physical insight may be gleaned from featureless spectra via multiple frequency EDMR. Baseline multiple frequency EDMR measurements are performed in a-Si:H and a-C:H to illustrate the nature of line broadening mechanisms of silicon and carbon related defects.",
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Defect chemistry and electronic transport in low-κ dielectrics studied with electrically detected magnetic resonance. / Mutch, Michael J.; Lenahan, Patrick M.; King, Sean W.

In: Journal of Applied Physics, Vol. 119, No. 9, 094102, 07.03.2016.

Research output: Contribution to journalArticle

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