Defect engineering of two-dimensional transition metal dichalcogenides

Zhong Lin, Bruno R. Carvalho, Ethan Kahn, Ruitao Lv, Rahul Rao, Humberto Terrones, Marcos A. Pimenta, Mauricio Terrones

Research output: Contribution to journalReview article

290 Citations (Scopus)

Abstract

Two-dimensional transition metal dichalcogenides (TMDs),anemerging family oflayered materials, have provided researchersafertile ground for harvesting fundamental science and emergent applications. TMDs can contain a number of different structural defects in their crystal lattices which significantly alter their physico-chemical properties. Having structural defects can be either detrimental or beneficial, depending on the targeted application. Therefore, a comprehensive understanding of structural defects is required. Here we review different defects in semiconducting TMDs by summarizing: (i) the dimensionalities and atomic structures of defects; (ii) the pathways to generating structural defects during and after synthesis and, (iii) the effects of having defects on the physico-chemical properties and applicationsof TMDs. Thus far, significant progress has been made, although we are probably still witnessing the tip of the iceberg. A better understanding and control of defectsis important in orderto move forward the field of Defect Engineering in TMDs. Finally,we also provide our perspective on the challenges and opportunities in this emerging field.

Original languageEnglish (US)
Article number022002
Journal2D Materials
Volume3
Issue number2
DOIs
StatePublished - Apr 13 2016

Fingerprint

Transition metals
transition metals
engineering
Defects
defects
chemical properties
Chemical properties
crystal lattices
atomic structure
Crystal lattices
emerging
synthesis

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lin, Zhong ; Carvalho, Bruno R. ; Kahn, Ethan ; Lv, Ruitao ; Rao, Rahul ; Terrones, Humberto ; Pimenta, Marcos A. ; Terrones, Mauricio. / Defect engineering of two-dimensional transition metal dichalcogenides. In: 2D Materials. 2016 ; Vol. 3, No. 2.
@article{7140ec8498654208922c935f34cd1792,
title = "Defect engineering of two-dimensional transition metal dichalcogenides",
abstract = "Two-dimensional transition metal dichalcogenides (TMDs),anemerging family oflayered materials, have provided researchersafertile ground for harvesting fundamental science and emergent applications. TMDs can contain a number of different structural defects in their crystal lattices which significantly alter their physico-chemical properties. Having structural defects can be either detrimental or beneficial, depending on the targeted application. Therefore, a comprehensive understanding of structural defects is required. Here we review different defects in semiconducting TMDs by summarizing: (i) the dimensionalities and atomic structures of defects; (ii) the pathways to generating structural defects during and after synthesis and, (iii) the effects of having defects on the physico-chemical properties and applicationsof TMDs. Thus far, significant progress has been made, although we are probably still witnessing the tip of the iceberg. A better understanding and control of defectsis important in orderto move forward the field of Defect Engineering in TMDs. Finally,we also provide our perspective on the challenges and opportunities in this emerging field.",
author = "Zhong Lin and Carvalho, {Bruno R.} and Ethan Kahn and Ruitao Lv and Rahul Rao and Humberto Terrones and Pimenta, {Marcos A.} and Mauricio Terrones",
year = "2016",
month = "4",
day = "13",
doi = "10.1088/2053-1583/3/2/022002",
language = "English (US)",
volume = "3",
journal = "2D Materials",
issn = "2053-1583",
publisher = "IOP Publishing Ltd.",
number = "2",

}

Lin, Z, Carvalho, BR, Kahn, E, Lv, R, Rao, R, Terrones, H, Pimenta, MA & Terrones, M 2016, 'Defect engineering of two-dimensional transition metal dichalcogenides', 2D Materials, vol. 3, no. 2, 022002. https://doi.org/10.1088/2053-1583/3/2/022002

Defect engineering of two-dimensional transition metal dichalcogenides. / Lin, Zhong; Carvalho, Bruno R.; Kahn, Ethan; Lv, Ruitao; Rao, Rahul; Terrones, Humberto; Pimenta, Marcos A.; Terrones, Mauricio.

In: 2D Materials, Vol. 3, No. 2, 022002, 13.04.2016.

Research output: Contribution to journalReview article

TY - JOUR

T1 - Defect engineering of two-dimensional transition metal dichalcogenides

AU - Lin, Zhong

AU - Carvalho, Bruno R.

AU - Kahn, Ethan

AU - Lv, Ruitao

AU - Rao, Rahul

AU - Terrones, Humberto

AU - Pimenta, Marcos A.

AU - Terrones, Mauricio

PY - 2016/4/13

Y1 - 2016/4/13

N2 - Two-dimensional transition metal dichalcogenides (TMDs),anemerging family oflayered materials, have provided researchersafertile ground for harvesting fundamental science and emergent applications. TMDs can contain a number of different structural defects in their crystal lattices which significantly alter their physico-chemical properties. Having structural defects can be either detrimental or beneficial, depending on the targeted application. Therefore, a comprehensive understanding of structural defects is required. Here we review different defects in semiconducting TMDs by summarizing: (i) the dimensionalities and atomic structures of defects; (ii) the pathways to generating structural defects during and after synthesis and, (iii) the effects of having defects on the physico-chemical properties and applicationsof TMDs. Thus far, significant progress has been made, although we are probably still witnessing the tip of the iceberg. A better understanding and control of defectsis important in orderto move forward the field of Defect Engineering in TMDs. Finally,we also provide our perspective on the challenges and opportunities in this emerging field.

AB - Two-dimensional transition metal dichalcogenides (TMDs),anemerging family oflayered materials, have provided researchersafertile ground for harvesting fundamental science and emergent applications. TMDs can contain a number of different structural defects in their crystal lattices which significantly alter their physico-chemical properties. Having structural defects can be either detrimental or beneficial, depending on the targeted application. Therefore, a comprehensive understanding of structural defects is required. Here we review different defects in semiconducting TMDs by summarizing: (i) the dimensionalities and atomic structures of defects; (ii) the pathways to generating structural defects during and after synthesis and, (iii) the effects of having defects on the physico-chemical properties and applicationsof TMDs. Thus far, significant progress has been made, although we are probably still witnessing the tip of the iceberg. A better understanding and control of defectsis important in orderto move forward the field of Defect Engineering in TMDs. Finally,we also provide our perspective on the challenges and opportunities in this emerging field.

UR - http://www.scopus.com/inward/record.url?scp=84977530088&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84977530088&partnerID=8YFLogxK

U2 - 10.1088/2053-1583/3/2/022002

DO - 10.1088/2053-1583/3/2/022002

M3 - Review article

AN - SCOPUS:84977530088

VL - 3

JO - 2D Materials

JF - 2D Materials

SN - 2053-1583

IS - 2

M1 - 022002

ER -

Lin Z, Carvalho BR, Kahn E, Lv R, Rao R, Terrones H et al. Defect engineering of two-dimensional transition metal dichalcogenides. 2D Materials. 2016 Apr 13;3(2). 022002. https://doi.org/10.1088/2053-1583/3/2/022002