Defect interactions of H2 in SiO2: Implications for ELDRS and latent interface trap buildup

Blair R. Tuttle, David R. Hughart, Ronald D. Schrimpf, Daniel M. Fleetwood, Sokrates T. Pantelides

Research output: Contribution to journalArticlepeer-review

39 Scopus citations

Abstract

The energetics of the interactions between molecular hydrogen and common defects in SiO2 that are typically associated with O deficiency have been obtained using atomic-scale quantum mechanical calculations. H2 does not easily crack at neutral vacancies, but it will crack efficiently at O vacancy sites that have captured a hole and relaxed into the puckered configuration of an Eγ′ defect, releasing a proton into the oxide. Isolated Si dangling bonds also can play a role in cracking H 2, depending on their concentration in the oxides. These results provide significant insight into the underlying causes of latent interface trap buildup in MOS devices and enhanced low-dose-rate sensitivity in linear bipolar devices.

Original languageEnglish (US)
Article number5658003
Pages (from-to)3046-3053
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume57
Issue number6 PART 1
DOIs
StatePublished - Dec 2010

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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