Defects and impurities in thermal oxides on silicon

K. L. Brower, P. M. Lenahan, P. V. Dressendorfer

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Abstract

Oxides grown at 1100°C in dry oxygen for 60 min to a thickness of 1350 Å on silicon with and without subsequent forming gas anneals were 60Co γ irradiated at 4 K with doses up to 106 rad (Si). In situ electron paramagnetic resonance measurements at 10 K revealed ≊3×1017 atomic hydrogen/cm3 and ∼10 17 oxygen-hole centers/cm3 in the oxide. The paramagnetic dangling bond on the silicon side of the Si/SiO2 interface (P b center) was also observed. The (relative) concentration of these centers was measured as a function of isochronal annealing between 10 and 300 K.

Original languageEnglish (US)
Pages (from-to)251-253
Number of pages3
JournalApplied Physics Letters
Volume41
Issue number3
DOIs
StatePublished - 1982

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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