Defects in HfO2 based dielectric gate stacks

Patrick M. Lenahan, Jason T. Ryan, Corey J. Cochrane, John F. Conley

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on both conventional electron paramagnetic resonance (EPR) measurements of fully processed HfO2 based dielectric films on silicon and on electrically detected magnetic resonance (EDMR) measurements of fully processed HfO2 based MOSFETs. The magnetic resonance measurements indicate the presence of oxygen vacancy and oxygen interstitial defects within the HfO2 and oxygen deficient silicons in the interfacial layer. The EDMR results also indicate the generation of at least two defects when HfO2 based transistors are subjected to significant negative bias at modest temperature. Our results indicate generation of multiple interface/near interface defects, likely involving coupling with nearby hafnium atoms.

Original languageEnglish (US)
Title of host publicationCMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications
PublisherMaterials Research Society
Pages3-13
Number of pages11
ISBN (Print)9781605111285
DOIs
StatePublished - Jan 1 2009
Event2009 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 14 2009Apr 16 2009

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1155
ISSN (Print)0272-9172

Other

Other2009 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/14/094/16/09

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Lenahan, P. M., Ryan, J. T., Cochrane, C. J., & Conley, J. F. (2009). Defects in HfO2 based dielectric gate stacks. In CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications (pp. 3-13). (Materials Research Society Symposium Proceedings; Vol. 1155). Materials Research Society. https://doi.org/10.1557/proc-1155-c12-01