Defects in HfO2 based dielectric gate stacks

Patrick M. Lenahan, Jason T. Ryan, Corey J. Cochrane, John F. Conley

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on both conventional electron paramagnetic resonance (EPR) measurements of fully processed HfO2 based dielectric films on silicon and on electrically detected magnetic resonance (EDMR) measurements of fully processed HfO2 based MOSFETs. The magnetic resonance measurements indicate the presence of oxygen vacancy and oxygen interstitial defects within the HfO2 and oxygen deficient silicons in the interfacial layer. The EDMR results also indicate the generation of at least two defects when HfO2 based transistors are subjected to significant negative bias at modest temperature. Our results indicate generation of multiple interface/near interface defects, likely involving coupling with nearby hafnium atoms.

Original languageEnglish (US)
Title of host publicationCMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications
Pages3-13
Number of pages11
StatePublished - Dec 1 2009
Event2009 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 14 2009Apr 16 2009

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1155
ISSN (Print)0272-9172

Other

Other2009 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/14/094/16/09

Fingerprint

Gate dielectrics
Magnetic resonance measurement
magnetic resonance
Silicon
Defects
defects
oxygen
Hafnium
Oxygen
Dielectric films
hafnium
silicon
Oxygen vacancies
Magnetic resonance
Paramagnetic resonance
electron paramagnetic resonance
interstitials
Transistors
transistors
field effect transistors

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lenahan, P. M., Ryan, J. T., Cochrane, C. J., & Conley, J. F. (2009). Defects in HfO2 based dielectric gate stacks. In CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications (pp. 3-13). (Materials Research Society Symposium Proceedings; Vol. 1155).
Lenahan, Patrick M. ; Ryan, Jason T. ; Cochrane, Corey J. ; Conley, John F. / Defects in HfO2 based dielectric gate stacks. CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications. 2009. pp. 3-13 (Materials Research Society Symposium Proceedings).
@inproceedings{b538d62beb944af4a68dbe237858b7da,
title = "Defects in HfO2 based dielectric gate stacks",
abstract = "We report on both conventional electron paramagnetic resonance (EPR) measurements of fully processed HfO2 based dielectric films on silicon and on electrically detected magnetic resonance (EDMR) measurements of fully processed HfO2 based MOSFETs. The magnetic resonance measurements indicate the presence of oxygen vacancy and oxygen interstitial defects within the HfO2 and oxygen deficient silicons in the interfacial layer. The EDMR results also indicate the generation of at least two defects when HfO2 based transistors are subjected to significant negative bias at modest temperature. Our results indicate generation of multiple interface/near interface defects, likely involving coupling with nearby hafnium atoms.",
author = "Lenahan, {Patrick M.} and Ryan, {Jason T.} and Cochrane, {Corey J.} and Conley, {John F.}",
year = "2009",
month = "12",
day = "1",
language = "English (US)",
isbn = "9781605111285",
series = "Materials Research Society Symposium Proceedings",
pages = "3--13",
booktitle = "CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications",

}

Lenahan, PM, Ryan, JT, Cochrane, CJ & Conley, JF 2009, Defects in HfO2 based dielectric gate stacks. in CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications. Materials Research Society Symposium Proceedings, vol. 1155, pp. 3-13, 2009 MRS Spring Meeting, San Francisco, CA, United States, 4/14/09.

Defects in HfO2 based dielectric gate stacks. / Lenahan, Patrick M.; Ryan, Jason T.; Cochrane, Corey J.; Conley, John F.

CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications. 2009. p. 3-13 (Materials Research Society Symposium Proceedings; Vol. 1155).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Defects in HfO2 based dielectric gate stacks

AU - Lenahan, Patrick M.

AU - Ryan, Jason T.

AU - Cochrane, Corey J.

AU - Conley, John F.

PY - 2009/12/1

Y1 - 2009/12/1

N2 - We report on both conventional electron paramagnetic resonance (EPR) measurements of fully processed HfO2 based dielectric films on silicon and on electrically detected magnetic resonance (EDMR) measurements of fully processed HfO2 based MOSFETs. The magnetic resonance measurements indicate the presence of oxygen vacancy and oxygen interstitial defects within the HfO2 and oxygen deficient silicons in the interfacial layer. The EDMR results also indicate the generation of at least two defects when HfO2 based transistors are subjected to significant negative bias at modest temperature. Our results indicate generation of multiple interface/near interface defects, likely involving coupling with nearby hafnium atoms.

AB - We report on both conventional electron paramagnetic resonance (EPR) measurements of fully processed HfO2 based dielectric films on silicon and on electrically detected magnetic resonance (EDMR) measurements of fully processed HfO2 based MOSFETs. The magnetic resonance measurements indicate the presence of oxygen vacancy and oxygen interstitial defects within the HfO2 and oxygen deficient silicons in the interfacial layer. The EDMR results also indicate the generation of at least two defects when HfO2 based transistors are subjected to significant negative bias at modest temperature. Our results indicate generation of multiple interface/near interface defects, likely involving coupling with nearby hafnium atoms.

UR - http://www.scopus.com/inward/record.url?scp=77951018427&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951018427&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:77951018427

SN - 9781605111285

T3 - Materials Research Society Symposium Proceedings

SP - 3

EP - 13

BT - CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications

ER -

Lenahan PM, Ryan JT, Cochrane CJ, Conley JF. Defects in HfO2 based dielectric gate stacks. In CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications. 2009. p. 3-13. (Materials Research Society Symposium Proceedings).