Defects produced by medium energy proton bombardment of MOS devices

P. M. Lenahan, T. D. Mishima, J. B. Jumper, Thomas N. Fogarty, M. Marrero, L. Cruz, S. Shojah-Ardalan, R. Dwivedi, Richard Wilkins, L. P. Trombetta, C. Singh

Research output: Contribution to conferencePaperpeer-review

Abstract

We report results of very sensitive electron spin (ESR) and electrical measurements made on MOSFETs subjected to medium energy proton bombardment. We observe that the measured defect density levels are similar for both the ESR measurements and electrical measurements. The density of defects is observed to be larger for proton bombarded devices compared to devices irradiated with much larger doses of 60Co gammna rays. Initial ESR and electrical measurements were made on-site soon after bombardment in the cyclotron.

Original languageEnglish (US)
Pages105-109
Number of pages5
StatePublished - Dec 1 2002
Event2001 6th European Conference on Radiation and Its Effects on Components and Systems - Grenoble, France
Duration: Sep 10 2001Sep 14 2001

Other

Other2001 6th European Conference on Radiation and Its Effects on Components and Systems
CountryFrance
CityGrenoble
Period9/10/019/14/01

All Science Journal Classification (ASJC) codes

  • Radiation
  • Electrical and Electronic Engineering

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