Definitive identification of an important 4H SiC MOSFET interface/near interface trap

C. J. Cochrane, Patrick M. Lenahan, A. J. Lelis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We utilize electrically detected magnetic resonance (EDMR) via spin dependent recombination (SDR) to provide a definitive identification of an interface/near interface defect present in a wide variety of 4H SiC/SiO 2 metal oxide semiconducting field effect transistors (MOSFETs).

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2011, ICSCRM 2011
Pages433-436
Number of pages4
DOIs
StatePublished - May 28 2012
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: Sep 11 2011Sep 16 2011

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)0255-5476

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period9/11/119/16/11

Fingerprint

Magnetic resonance
Field effect transistors
Oxides
metal oxides
field effect transistors
Metals
traps
Defects
magnetic resonance
defects

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Cochrane, C. J., Lenahan, P. M., & Lelis, A. J. (2012). Definitive identification of an important 4H SiC MOSFET interface/near interface trap. In Silicon Carbide and Related Materials 2011, ICSCRM 2011 (pp. 433-436). (Materials Science Forum; Vol. 717-720). https://doi.org/10.4028/www.scientific.net/MSF.717-720.433
Cochrane, C. J. ; Lenahan, Patrick M. ; Lelis, A. J. / Definitive identification of an important 4H SiC MOSFET interface/near interface trap. Silicon Carbide and Related Materials 2011, ICSCRM 2011. 2012. pp. 433-436 (Materials Science Forum).
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abstract = "We utilize electrically detected magnetic resonance (EDMR) via spin dependent recombination (SDR) to provide a definitive identification of an interface/near interface defect present in a wide variety of 4H SiC/SiO 2 metal oxide semiconducting field effect transistors (MOSFETs).",
author = "Cochrane, {C. J.} and Lenahan, {Patrick M.} and Lelis, {A. J.}",
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Cochrane, CJ, Lenahan, PM & Lelis, AJ 2012, Definitive identification of an important 4H SiC MOSFET interface/near interface trap. in Silicon Carbide and Related Materials 2011, ICSCRM 2011. Materials Science Forum, vol. 717-720, pp. 433-436, 14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011, Cleveland, OH, United States, 9/11/11. https://doi.org/10.4028/www.scientific.net/MSF.717-720.433

Definitive identification of an important 4H SiC MOSFET interface/near interface trap. / Cochrane, C. J.; Lenahan, Patrick M.; Lelis, A. J.

Silicon Carbide and Related Materials 2011, ICSCRM 2011. 2012. p. 433-436 (Materials Science Forum; Vol. 717-720).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - We utilize electrically detected magnetic resonance (EDMR) via spin dependent recombination (SDR) to provide a definitive identification of an interface/near interface defect present in a wide variety of 4H SiC/SiO 2 metal oxide semiconducting field effect transistors (MOSFETs).

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Cochrane CJ, Lenahan PM, Lelis AJ. Definitive identification of an important 4H SiC MOSFET interface/near interface trap. In Silicon Carbide and Related Materials 2011, ICSCRM 2011. 2012. p. 433-436. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.717-720.433