Definitive identification of an important 4H SiC MOSFET interface/near interface trap

C. J. Cochrane, Patrick M. Lenahan, A. J. Lelis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We utilize electrically detected magnetic resonance (EDMR) via spin dependent recombination (SDR) to provide a definitive identification of an interface/near interface defect present in a wide variety of 4H SiC/SiO 2 metal oxide semiconducting field effect transistors (MOSFETs).

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2011, ICSCRM 2011
Pages433-436
Number of pages4
DOIs
StatePublished - May 28 2012
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: Sep 11 2011Sep 16 2011

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)0255-5476

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period9/11/119/16/11

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Cochrane, C. J., Lenahan, P. M., & Lelis, A. J. (2012). Definitive identification of an important 4H SiC MOSFET interface/near interface trap. In Silicon Carbide and Related Materials 2011, ICSCRM 2011 (pp. 433-436). (Materials Science Forum; Vol. 717-720). https://doi.org/10.4028/www.scientific.net/MSF.717-720.433