@article{966e70b7c88c40a48783c9268f7c09c8,
title = "Delta-doped β -Ga2O3films with narrow FWHM grown by metalorganic vapor-phase epitaxy",
abstract = "We report on the low-temperature metalorganic vapor-phase epitaxy (MOVPE) growth of silicon delta-doped β-Ga2O3 films with a low full width at half maximum (FWHM). The as-grown films are characterized using secondary-ion mass spectroscopy, capacitance-voltage, and Hall techniques. Secondary ion mass spectroscopy measurements show that surface segregation is the chief cause of a large FWHM in MOVPE-grown films. The surface segregation coefficient (R) is observed to reduce with reduction in the growth temperature. Films grown at 600 °C show an electron concentration of 9.7 × 1012 cm-2 and a FWHM of 3.2 nm. High resolution scanning/transmission electron microscopy of the epitaxial film did not reveal any observable degradation in the crystal quality of the delta sheet and surrounding regions. Hall measurements of the delta-doped film on the Fe-doped substrate showed a sheet charge density of 6.1 × 1012 cm-2 and a carrier mobility of 83 cm2/V s. Realization of sharp delta doping profiles in MOVPE-grown β-Ga2O3 is promising for high performance device applications.",
author = "Praneeth Ranga and Arkka Bhattacharyya and Adrian Chmielewski and Saurav Roy and Nasim Alem and Sriram Krishnamoorthy",
note = "Funding Information: This material is based upon work supported by the Air Force Office of Scientific Research under Award No. FA9550-18-1-0507 and monitored by Dr. Ali Sayir. Any opinions, findings, conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the United States Air Force. Praneeth Ranga acknowledges support from the University of Utah Graduate Research Fellowship 2020–2021. This work was performed in part at the Utah Nanofab sponsored by the College of Engineering and the Office of the Vice President for Research. The authors thank the Air Force Research Laboratory{\textquoteright}s Sensors Directorate for discussions. We also thank Professor Michael Scarpulla at the University of Utah for providing access to equipment used in this work. The electron microscopy work was performed in the Materials Characterization lab (MCL) at the Materials Research Institute (MRI) at the Pennsylvania State University. The work at PSU was supported by the AFOSR Program No. FA9550-18-1-0277 (GAME MURI, Dr. Ali Sayir, Program Manager). Publisher Copyright: {\textcopyright} 2020 Author(s).",
year = "2020",
month = oct,
day = "26",
doi = "10.1063/5.0027827",
language = "English (US)",
volume = "117",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "17",
}