Demonstration of improved heteroepitaxy, scaled gate stack and reduced interface states enabling heterojunction tunnel FETs with high drive current and high on-off ratio

D. K. Mohata, R. Bijesh, Y. Zhu, M. K. Hudait, R. Southwick, Z. Chbili, D. Gundlach, J. Suehle, J. M. Fastenau, D. Loubychev, A. K. Liu, T. S. Mayer, V. Narayanan, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

62 Scopus citations

Abstract

Staggered tunnel junction (GaAs 0.35Sb 0.65/In 0.7Ga 0.3As) is used to demonstrate heterojunction tunnel FET (TFET) with the highest drive current, I on, of 135μA/μm and highest I on/I off ratio of 2.7×10 4 (V ds=0.5V, V on=V off=1.5V). Effective oxide thickness (EOT) scaling (using Al 2O 3/HfO 2 bilayer gate stack) coupled with pulsed I-V measurements (suppressing D it response) enable demonstration of steeper switching TFET.

Original languageEnglish (US)
Title of host publication2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers
Pages53-54
Number of pages2
DOIs
StatePublished - Sep 27 2012
Event2012 Symposium on VLSI Technology, VLSIT 2012 - Honolulu, HI, United States
Duration: Jun 12 2012Jun 14 2012

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2012 Symposium on VLSI Technology, VLSIT 2012
CountryUnited States
CityHonolulu, HI
Period6/12/126/14/12

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Mohata, D. K., Bijesh, R., Zhu, Y., Hudait, M. K., Southwick, R., Chbili, Z., Gundlach, D., Suehle, J., Fastenau, J. M., Loubychev, D., Liu, A. K., Mayer, T. S., Narayanan, V., & Datta, S. (2012). Demonstration of improved heteroepitaxy, scaled gate stack and reduced interface states enabling heterojunction tunnel FETs with high drive current and high on-off ratio. In 2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers (pp. 53-54). [6242457] (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2012.6242457