Demonstration of improved heteroepitaxy, scaled gate stack and reduced interface states enabling heterojunction tunnel FETs with high drive current and high on-off ratio

D. K. Mohata, R. Bijesh, Y. Zhu, M. K. Hudait, R. Southwick, Z. Chbili, D. Gundlach, J. Suehle, J. M. Fastenau, D. Loubychev, A. K. Liu, T. S. Mayer, V. Narayanan, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

62 Scopus citations

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Engineering & Materials Science