Demonstration of In0.9Ga0.1As/GaAs 0.18Sb0.82 near broken-gap tunnel FET with I ON=740μA/μm, GM=70μS/μm and gigahertz switching performance at VDs=0.5V

R. Bijesh, H. Liu, H. Madan, D. Mohata, W. Li, N. V. Nguyen, D. Gundlach, C. A. Richter, J. Maier, K. Wang, T. Clarke, J. M. Fastenau, D. Loubychev, W. K. Liu, Vijaykrishnan Narayanan, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

We demonstrate high frequency switching characteristics of TFETs based on the In0.9Ga0.1As/GaAs0.18Sb0.82 material system. These near broken-gap TFETs (NBTFETs) with 200nm channel length exhibit record drive current (ION) of 740μA/μm, intrinsic RF transconductance (GM) of 700μS/μm, and a cut-off frequency (FT) of 19GHz at VDS=0.5V. Numerical simulations calibrated to the experimental data are used to provide insight into the impact of vertical architecture on switching performance of TFETs at scaled technology nodes.

Original languageEnglish (US)
Title of host publication2013 IEEE International Electron Devices Meeting, IEDM 2013
DOIs
StatePublished - Dec 1 2013
Event2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States
Duration: Dec 9 2013Dec 11 2013

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2013 IEEE International Electron Devices Meeting, IEDM 2013
CountryUnited States
CityWashington, DC
Period12/9/1312/11/13

Fingerprint

Cutoff frequency
Transconductance
Switching frequency
Field effect transistors
tunnels
Tunnels
Demonstrations
field effect transistors
Computer simulation
transconductance
cut-off
simulation
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Bijesh, R., Liu, H., Madan, H., Mohata, D., Li, W., Nguyen, N. V., ... Datta, S. (2013). Demonstration of In0.9Ga0.1As/GaAs 0.18Sb0.82 near broken-gap tunnel FET with I ON=740μA/μm, GM=70μS/μm and gigahertz switching performance at VDs=0.5V. In 2013 IEEE International Electron Devices Meeting, IEDM 2013 [6724708] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2013.6724708
Bijesh, R. ; Liu, H. ; Madan, H. ; Mohata, D. ; Li, W. ; Nguyen, N. V. ; Gundlach, D. ; Richter, C. A. ; Maier, J. ; Wang, K. ; Clarke, T. ; Fastenau, J. M. ; Loubychev, D. ; Liu, W. K. ; Narayanan, Vijaykrishnan ; Datta, S. / Demonstration of In0.9Ga0.1As/GaAs 0.18Sb0.82 near broken-gap tunnel FET with I ON=740μA/μm, GM=70μS/μm and gigahertz switching performance at VDs=0.5V. 2013 IEEE International Electron Devices Meeting, IEDM 2013. 2013. (Technical Digest - International Electron Devices Meeting, IEDM).
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title = "Demonstration of In0.9Ga0.1As/GaAs 0.18Sb0.82 near broken-gap tunnel FET with I ON=740μA/μm, GM=70μS/μm and gigahertz switching performance at VDs=0.5V",
abstract = "We demonstrate high frequency switching characteristics of TFETs based on the In0.9Ga0.1As/GaAs0.18Sb0.82 material system. These near broken-gap TFETs (NBTFETs) with 200nm channel length exhibit record drive current (ION) of 740μA/μm, intrinsic RF transconductance (GM) of 700μS/μm, and a cut-off frequency (FT) of 19GHz at VDS=0.5V. Numerical simulations calibrated to the experimental data are used to provide insight into the impact of vertical architecture on switching performance of TFETs at scaled technology nodes.",
author = "R. Bijesh and H. Liu and H. Madan and D. Mohata and W. Li and Nguyen, {N. V.} and D. Gundlach and Richter, {C. A.} and J. Maier and K. Wang and T. Clarke and Fastenau, {J. M.} and D. Loubychev and Liu, {W. K.} and Vijaykrishnan Narayanan and S. Datta",
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doi = "10.1109/IEDM.2013.6724708",
language = "English (US)",
isbn = "9781479923076",
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Bijesh, R, Liu, H, Madan, H, Mohata, D, Li, W, Nguyen, NV, Gundlach, D, Richter, CA, Maier, J, Wang, K, Clarke, T, Fastenau, JM, Loubychev, D, Liu, WK, Narayanan, V & Datta, S 2013, Demonstration of In0.9Ga0.1As/GaAs 0.18Sb0.82 near broken-gap tunnel FET with I ON=740μA/μm, GM=70μS/μm and gigahertz switching performance at VDs=0.5V. in 2013 IEEE International Electron Devices Meeting, IEDM 2013., 6724708, Technical Digest - International Electron Devices Meeting, IEDM, 2013 IEEE International Electron Devices Meeting, IEDM 2013, Washington, DC, United States, 12/9/13. https://doi.org/10.1109/IEDM.2013.6724708

Demonstration of In0.9Ga0.1As/GaAs 0.18Sb0.82 near broken-gap tunnel FET with I ON=740μA/μm, GM=70μS/μm and gigahertz switching performance at VDs=0.5V. / Bijesh, R.; Liu, H.; Madan, H.; Mohata, D.; Li, W.; Nguyen, N. V.; Gundlach, D.; Richter, C. A.; Maier, J.; Wang, K.; Clarke, T.; Fastenau, J. M.; Loubychev, D.; Liu, W. K.; Narayanan, Vijaykrishnan; Datta, S.

2013 IEEE International Electron Devices Meeting, IEDM 2013. 2013. 6724708 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Demonstration of In0.9Ga0.1As/GaAs 0.18Sb0.82 near broken-gap tunnel FET with I ON=740μA/μm, GM=70μS/μm and gigahertz switching performance at VDs=0.5V

AU - Bijesh, R.

AU - Liu, H.

AU - Madan, H.

AU - Mohata, D.

AU - Li, W.

AU - Nguyen, N. V.

AU - Gundlach, D.

AU - Richter, C. A.

AU - Maier, J.

AU - Wang, K.

AU - Clarke, T.

AU - Fastenau, J. M.

AU - Loubychev, D.

AU - Liu, W. K.

AU - Narayanan, Vijaykrishnan

AU - Datta, S.

PY - 2013/12/1

Y1 - 2013/12/1

N2 - We demonstrate high frequency switching characteristics of TFETs based on the In0.9Ga0.1As/GaAs0.18Sb0.82 material system. These near broken-gap TFETs (NBTFETs) with 200nm channel length exhibit record drive current (ION) of 740μA/μm, intrinsic RF transconductance (GM) of 700μS/μm, and a cut-off frequency (FT) of 19GHz at VDS=0.5V. Numerical simulations calibrated to the experimental data are used to provide insight into the impact of vertical architecture on switching performance of TFETs at scaled technology nodes.

AB - We demonstrate high frequency switching characteristics of TFETs based on the In0.9Ga0.1As/GaAs0.18Sb0.82 material system. These near broken-gap TFETs (NBTFETs) with 200nm channel length exhibit record drive current (ION) of 740μA/μm, intrinsic RF transconductance (GM) of 700μS/μm, and a cut-off frequency (FT) of 19GHz at VDS=0.5V. Numerical simulations calibrated to the experimental data are used to provide insight into the impact of vertical architecture on switching performance of TFETs at scaled technology nodes.

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U2 - 10.1109/IEDM.2013.6724708

DO - 10.1109/IEDM.2013.6724708

M3 - Conference contribution

AN - SCOPUS:84894338279

SN - 9781479923076

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2013 IEEE International Electron Devices Meeting, IEDM 2013

ER -

Bijesh R, Liu H, Madan H, Mohata D, Li W, Nguyen NV et al. Demonstration of In0.9Ga0.1As/GaAs 0.18Sb0.82 near broken-gap tunnel FET with I ON=740μA/μm, GM=70μS/μm and gigahertz switching performance at VDs=0.5V. In 2013 IEEE International Electron Devices Meeting, IEDM 2013. 2013. 6724708. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2013.6724708