Demonstration of In0.9Ga0.1As/GaAs 0.18Sb0.82 near broken-gap tunnel FET with I ON=740μA/μm, GM=70μS/μm and gigahertz switching performance at VDs=0.5V

R. Bijesh, H. Liu, H. Madan, D. Mohata, W. Li, N. V. Nguyen, D. Gundlach, C. A. Richter, J. Maier, K. Wang, T. Clarke, J. M. Fastenau, D. Loubychev, W. K. Liu, Vijaykrishnan Narayanan, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Scopus citations

Abstract

We demonstrate high frequency switching characteristics of TFETs based on the In0.9Ga0.1As/GaAs0.18Sb0.82 material system. These near broken-gap TFETs (NBTFETs) with 200nm channel length exhibit record drive current (ION) of 740μA/μm, intrinsic RF transconductance (GM) of 700μS/μm, and a cut-off frequency (FT) of 19GHz at VDS=0.5V. Numerical simulations calibrated to the experimental data are used to provide insight into the impact of vertical architecture on switching performance of TFETs at scaled technology nodes.

Original languageEnglish (US)
Title of host publication2013 IEEE International Electron Devices Meeting, IEDM 2013
DOIs
StatePublished - Dec 1 2013
Event2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States
Duration: Dec 9 2013Dec 11 2013

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2013 IEEE International Electron Devices Meeting, IEDM 2013
CountryUnited States
CityWashington, DC
Period12/9/1312/11/13

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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