Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications

D. K. Mohata, R. Bijesh, S. Mujumdar, C. Eaton, Roman Engel-Herbert, T. Mayer, Vijaykrishnan Narayanan, J. M. Fastenau, D. Loubychev, A. K. Liu, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

42 Citations (Scopus)

Abstract

Type II arsenide/antimonide compound semiconductor with highly staggered GaAs 0.35Sb 0.65/In 0.7Ga 0.3As hetero-junction is used to demonstrate hetero tunnel FET (TFET) with record high drive currents (I ON) of 190μA/μm and 100μA/μm at V DS=0.75V and 0.3V, respectively (L G=150nm). In xGa 1-xAs (x=0.53, 0.7) homo-junction TFETs and GaAs 0.5Sb 0.5/In 0.53Ga 0.47As hetero TFET with moderate stagger are also fabricated with the same process flow for benchmarking. Measured and simulated TFET performance is benchmarked with 40nm strained Si MOS-FETs for 300mV logic applications.

Original languageEnglish (US)
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
DOIs
StatePublished - Dec 1 2011
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: Dec 5 2011Dec 7 2011

Other

Other2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period12/5/1112/7/11

Fingerprint

Field effect transistors
logic
tunnels
Tunnels
Demonstrations
field effect transistors
Benchmarking
Semiconductor materials
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Mohata, D. K., Bijesh, R., Mujumdar, S., Eaton, C., Engel-Herbert, R., Mayer, T., ... Datta, S. (2011). Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications. In 2011 International Electron Devices Meeting, IEDM 2011 [6131665] https://doi.org/10.1109/IEDM.2011.6131665
Mohata, D. K. ; Bijesh, R. ; Mujumdar, S. ; Eaton, C. ; Engel-Herbert, Roman ; Mayer, T. ; Narayanan, Vijaykrishnan ; Fastenau, J. M. ; Loubychev, D. ; Liu, A. K. ; Datta, S. / Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications. 2011 International Electron Devices Meeting, IEDM 2011. 2011.
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abstract = "Type II arsenide/antimonide compound semiconductor with highly staggered GaAs 0.35Sb 0.65/In 0.7Ga 0.3As hetero-junction is used to demonstrate hetero tunnel FET (TFET) with record high drive currents (I ON) of 190μA/μm and 100μA/μm at V DS=0.75V and 0.3V, respectively (L G=150nm). In xGa 1-xAs (x=0.53, 0.7) homo-junction TFETs and GaAs 0.5Sb 0.5/In 0.53Ga 0.47As hetero TFET with moderate stagger are also fabricated with the same process flow for benchmarking. Measured and simulated TFET performance is benchmarked with 40nm strained Si MOS-FETs for 300mV logic applications.",
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Mohata, DK, Bijesh, R, Mujumdar, S, Eaton, C, Engel-Herbert, R, Mayer, T, Narayanan, V, Fastenau, JM, Loubychev, D, Liu, AK & Datta, S 2011, Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications. in 2011 International Electron Devices Meeting, IEDM 2011., 6131665, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 12/5/11. https://doi.org/10.1109/IEDM.2011.6131665

Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications. / Mohata, D. K.; Bijesh, R.; Mujumdar, S.; Eaton, C.; Engel-Herbert, Roman; Mayer, T.; Narayanan, Vijaykrishnan; Fastenau, J. M.; Loubychev, D.; Liu, A. K.; Datta, S.

2011 International Electron Devices Meeting, IEDM 2011. 2011. 6131665.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - Type II arsenide/antimonide compound semiconductor with highly staggered GaAs 0.35Sb 0.65/In 0.7Ga 0.3As hetero-junction is used to demonstrate hetero tunnel FET (TFET) with record high drive currents (I ON) of 190μA/μm and 100μA/μm at V DS=0.75V and 0.3V, respectively (L G=150nm). In xGa 1-xAs (x=0.53, 0.7) homo-junction TFETs and GaAs 0.5Sb 0.5/In 0.53Ga 0.47As hetero TFET with moderate stagger are also fabricated with the same process flow for benchmarking. Measured and simulated TFET performance is benchmarked with 40nm strained Si MOS-FETs for 300mV logic applications.

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