Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications

D. K. Mohata, R. Bijesh, S. Mujumdar, C. Eaton, R. Engel-Herbert, T. Mayer, V. Narayanan, J. M. Fastenau, D. Loubychev, A. K. Liu, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

50 Scopus citations

Abstract

Type II arsenide/antimonide compound semiconductor with highly staggered GaAs 0.35Sb 0.65/In 0.7Ga 0.3As hetero-junction is used to demonstrate hetero tunnel FET (TFET) with record high drive currents (I ON) of 190μA/μm and 100μA/μm at V DS=0.75V and 0.3V, respectively (L G=150nm). In xGa 1-xAs (x=0.53, 0.7) homo-junction TFETs and GaAs 0.5Sb 0.5/In 0.53Ga 0.47As hetero TFET with moderate stagger are also fabricated with the same process flow for benchmarking. Measured and simulated TFET performance is benchmarked with 40nm strained Si MOS-FETs for 300mV logic applications.

Original languageEnglish (US)
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
Pages33.5.1-33.5.4
DOIs
StatePublished - Dec 1 2011
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: Dec 5 2011Dec 7 2011

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period12/5/1112/7/11

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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