Density of states of Pb1 Si/SiO2 interface trap centers

J. P. Campbell, Patrick M. Lenahan

Research output: Contribution to journalArticlepeer-review

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Abstract

The electronic properties of the (100) Si/SiO2 interfacial defect called Pb1 are quite controversial. We present electron spin resonance measurements that demonstrate: (1) that the Pb1 defects have levels in the silicon band gap, (2) that the Pb1 correlation energy is significantly smaller than that of the Pb1 defect, and (3) that the Pb1 levels are skewed toward the lower part of the silicon band gap.

Original languageEnglish (US)
Pages (from-to)1945-1947
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number11
DOIs
StatePublished - Mar 18 2002

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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