The effcts of HCl on the bulk generation process in silicon has been investigated using MOS diodes based on HCl-grown oxides. The current and capacitance transient responses have been combined to characterize the test devices using four different methods. The results indicate that with the increase in HCl concentration to 6% in the oxidizing ambient the generation lifetime improves significantly. This implies a corresponding reduction of the near-midgap residual defect concentration in silicon due to the gettering effects of HCl. In the test samples the energy level of the dominant residual defect has been identified at 0.128 eV above the midgap.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry