Dependence of minority carrier bulk generation in silicon MOS structures on HCl concentration in an oxidizing ambient

Paul Esqueda, Mukunda B. Das

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The effcts of HCl on the bulk generation process in silicon has been investigated using MOS diodes based on HCl-grown oxides. The current and capacitance transient responses have been combined to characterize the test devices using four different methods. The results indicate that with the increase in HCl concentration to 6% in the oxidizing ambient the generation lifetime improves significantly. This implies a corresponding reduction of the near-midgap residual defect concentration in silicon due to the gettering effects of HCl. In the test samples the energy level of the dominant residual defect has been identified at 0.128 eV above the midgap.

Original languageEnglish (US)
Pages (from-to)741-746
Number of pages6
JournalSolid-State Electronics
Volume23
Issue number7
DOIs
StatePublished - Jan 1 1980

Fingerprint

Silicon
minority carriers
Defects
defects
transient response
silicon
Transient analysis
Oxides
Electron energy levels
Diodes
Capacitance
capacitance
energy levels
diodes
life (durability)
oxides

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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abstract = "The effcts of HCl on the bulk generation process in silicon has been investigated using MOS diodes based on HCl-grown oxides. The current and capacitance transient responses have been combined to characterize the test devices using four different methods. The results indicate that with the increase in HCl concentration to 6{\%} in the oxidizing ambient the generation lifetime improves significantly. This implies a corresponding reduction of the near-midgap residual defect concentration in silicon due to the gettering effects of HCl. In the test samples the energy level of the dominant residual defect has been identified at 0.128 eV above the midgap.",
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Dependence of minority carrier bulk generation in silicon MOS structures on HCl concentration in an oxidizing ambient. / Esqueda, Paul; Das, Mukunda B.

In: Solid-State Electronics, Vol. 23, No. 7, 01.01.1980, p. 741-746.

Research output: Contribution to journalArticle

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