Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction

D. Qiao, L. S. Yu, S. S. Lau, Joan Marie Redwing, J. Y. Lin, H. X. Jiang

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Abstract

The dependence of the Schottky barrier height of Ni/AlxGal - xN contact on the Al mole fraction up to x = 0.23 was studied. The barrier heights were measured by I-V, capacitance-voltage, and the internal photoemission method. The Al mole fractions were estimated from the AlGaN band gap energies measured by photoluminescence. In the range of x < 0.2 a linear relationship between the barrier height and Al mole fraction was obtained. This was consistent with the slope predicted by the Schottky rule. For x = 0.23, the measured barrier height was lower than predicted. We believed this was due to crystalline defects at the Ni/AlGaN interface.

Original languageEnglish (US)
Pages (from-to)801-804
Number of pages4
JournalJournal of Applied Physics
Volume87
Issue number2
DOIs
StatePublished - Jan 15 2000

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photoelectric emission
capacitance
slopes
photoluminescence
defects
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Qiao, D. ; Yu, L. S. ; Lau, S. S. ; Redwing, Joan Marie ; Lin, J. Y. ; Jiang, H. X. / Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction. In: Journal of Applied Physics. 2000 ; Vol. 87, No. 2. pp. 801-804.
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Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction. / Qiao, D.; Yu, L. S.; Lau, S. S.; Redwing, Joan Marie; Lin, J. Y.; Jiang, H. X.

In: Journal of Applied Physics, Vol. 87, No. 2, 15.01.2000, p. 801-804.

Research output: Contribution to journalArticle

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AU - Qiao, D.

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AU - Jiang, H. X.

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