Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction

D. Qiao; L. S. Yu; S. S. Lau; J. M. Redwing; J. Y. Lin; H. X. Jiang

doi:10.1063/1.371944

Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction

D. Qiao, L. S. Yu, S. S. Lau, J. M. Redwing, J. Y. Lin, H. X. Jiang

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Abstract

The dependence of the Schottky barrier height of Ni/Al_xGa_{l - x}N contact on the Al mole fraction up to x = 0.23 was studied. The barrier heights were measured by I-V, capacitance-voltage, and the internal photoemission method. The Al mole fractions were estimated from the AlGaN band gap energies measured by photoluminescence. In the range of x < 0.2 a linear relationship between the barrier height and Al mole fraction was obtained. This was consistent with the slope predicted by the Schottky rule. For x = 0.23, the measured barrier height was lower than predicted. We believed this was due to crystalline defects at the Ni/AlGaN interface.

Original language	English (US)
Pages (from-to)	801-804
Number of pages	4
Journal	Journal of Applied Physics
Volume	87
Issue number	2
DOIs	https://doi.org/10.1063/1.371944
State	Published - Jan 15 2000

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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title = "Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction",

abstract = "The dependence of the Schottky barrier height of Ni/AlxGal - xN contact on the Al mole fraction up to x = 0.23 was studied. The barrier heights were measured by I-V, capacitance-voltage, and the internal photoemission method. The Al mole fractions were estimated from the AlGaN band gap energies measured by photoluminescence. In the range of x < 0.2 a linear relationship between the barrier height and Al mole fraction was obtained. This was consistent with the slope predicted by the Schottky rule. For x = 0.23, the measured barrier height was lower than predicted. We believed this was due to crystalline defects at the Ni/AlGaN interface.",

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T1 - Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction

AU - Qiao, D.

AU - Yu, L. S.

AU - Lau, S. S.

AU - Redwing, J. M.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2000/1/15

Y1 - 2000/1/15

N2 - The dependence of the Schottky barrier height of Ni/AlxGal - xN contact on the Al mole fraction up to x = 0.23 was studied. The barrier heights were measured by I-V, capacitance-voltage, and the internal photoemission method. The Al mole fractions were estimated from the AlGaN band gap energies measured by photoluminescence. In the range of x < 0.2 a linear relationship between the barrier height and Al mole fraction was obtained. This was consistent with the slope predicted by the Schottky rule. For x = 0.23, the measured barrier height was lower than predicted. We believed this was due to crystalline defects at the Ni/AlGaN interface.

AB - The dependence of the Schottky barrier height of Ni/AlxGal - xN contact on the Al mole fraction up to x = 0.23 was studied. The barrier heights were measured by I-V, capacitance-voltage, and the internal photoemission method. The Al mole fractions were estimated from the AlGaN band gap energies measured by photoluminescence. In the range of x < 0.2 a linear relationship between the barrier height and Al mole fraction was obtained. This was consistent with the slope predicted by the Schottky rule. For x = 0.23, the measured barrier height was lower than predicted. We believed this was due to crystalline defects at the Ni/AlGaN interface.

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Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction

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