Dependence of threshold thickness of crystallization and film morphology on film processing conditions in poly(vinylidene fluoride-trifluoroethylene) copolymer thin films

Feng Xia, B. Razavi, Haisheng Xu, Z. Y. Cheng, Q. M. Zhang

    Research output: Contribution to journalArticle

    69 Citations (Scopus)

    Abstract

    In spin-cast films of poly(vinylidene fluoride-trifluoroethylene) on metalized silicon substrate, there exists a threshold thickness of crystallization d th, below which the crystallinity drops precipitously. Due to the direct link between the crystallinity and functional properties in the polymer, there is a corresponding large change in the film ferroelectric properties, including the dielectric constant, the polarization level, and polarization switching speed, as the thickness is reduced to below d th. Detail microstructure studies show that this threshold thickness is controlled by the stable crystal lamellar size along the film thickness direction. By varying the film processing condition to reduce the crystal lamellar size in the thickness direction, d th can be reduced markedly. As a result, better ferroelectric responses were obtained in ultrathin films.

    Original languageEnglish (US)
    Pages (from-to)3111-3115
    Number of pages5
    JournalJournal of Applied Physics
    Volume92
    Issue number6
    DOIs
    StatePublished - Sep 15 2002

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    vinylidene
    fluorides
    copolymers
    crystallization
    thresholds
    thin films
    crystallinity
    polarization
    crystals
    casts
    film thickness
    permittivity
    microstructure
    polymers
    silicon

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy(all)

    Cite this

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    title = "Dependence of threshold thickness of crystallization and film morphology on film processing conditions in poly(vinylidene fluoride-trifluoroethylene) copolymer thin films",
    abstract = "In spin-cast films of poly(vinylidene fluoride-trifluoroethylene) on metalized silicon substrate, there exists a threshold thickness of crystallization d th, below which the crystallinity drops precipitously. Due to the direct link between the crystallinity and functional properties in the polymer, there is a corresponding large change in the film ferroelectric properties, including the dielectric constant, the polarization level, and polarization switching speed, as the thickness is reduced to below d th. Detail microstructure studies show that this threshold thickness is controlled by the stable crystal lamellar size along the film thickness direction. By varying the film processing condition to reduce the crystal lamellar size in the thickness direction, d th can be reduced markedly. As a result, better ferroelectric responses were obtained in ultrathin films.",
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    Dependence of threshold thickness of crystallization and film morphology on film processing conditions in poly(vinylidene fluoride-trifluoroethylene) copolymer thin films. / Xia, Feng; Razavi, B.; Xu, Haisheng; Cheng, Z. Y.; Zhang, Q. M.

    In: Journal of Applied Physics, Vol. 92, No. 6, 15.09.2002, p. 3111-3115.

    Research output: Contribution to journalArticle

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    T1 - Dependence of threshold thickness of crystallization and film morphology on film processing conditions in poly(vinylidene fluoride-trifluoroethylene) copolymer thin films

    AU - Xia, Feng

    AU - Razavi, B.

    AU - Xu, Haisheng

    AU - Cheng, Z. Y.

    AU - Zhang, Q. M.

    PY - 2002/9/15

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    AB - In spin-cast films of poly(vinylidene fluoride-trifluoroethylene) on metalized silicon substrate, there exists a threshold thickness of crystallization d th, below which the crystallinity drops precipitously. Due to the direct link between the crystallinity and functional properties in the polymer, there is a corresponding large change in the film ferroelectric properties, including the dielectric constant, the polarization level, and polarization switching speed, as the thickness is reduced to below d th. Detail microstructure studies show that this threshold thickness is controlled by the stable crystal lamellar size along the film thickness direction. By varying the film processing condition to reduce the crystal lamellar size in the thickness direction, d th can be reduced markedly. As a result, better ferroelectric responses were obtained in ultrathin films.

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