Depletion-Mode GaAs SISFET's By Selective Ion Implantation

H. Baratte, Paul M. Solomon, D. C. La Tulipe, Thomas N. Jackson, D. J. Frank, S. L. Wright

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Abstract

Silicon donors have been implanted through the gate and into the (Al,Ga)As insulator of a GaAs SISFET structure in order to produce a negative shift in the device threshold voltage in selective areas of the wafer. The depletion-mode devices fabricated in this manner have controllable threshold voltage, high transconductance (350 mS/mm at 300 K and 380 mS/mm at 77 K for 1- μ m gate-length devices), and low gate leakage characteristics. Such devices are suitable for enhance-deplete GaAs SISFET logic circuits.

Original languageEnglish (US)
Pages (from-to)486-488
Number of pages3
JournalIEEE Electron Device Letters
Volume8
Issue number10
DOIs
Publication statusPublished - Oct 1987

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Baratte, H., Solomon, P. M., La Tulipe, D. C., Jackson, T. N., Frank, D. J., & Wright, S. L. (1987). Depletion-Mode GaAs SISFET's By Selective Ion Implantation. IEEE Electron Device Letters, 8(10), 486-488. https://doi.org/10.1109/EDL.1987.26703