Deposition and characterization of dielectric thin films from allyltrimethylsilane glow discharges

Antonella Milella, Fabio Palumbo, James L. Delattre, Francesco Fracassi, Riccardo d'Agostino

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Thin films with a dielectric constant in the range of 1.9-4.5 have been deposited under different experimental conditions from allyltrimethylsilane (ATMS) and oxygen fed glow discharges. The thermal stability of the coatings is evaluated from thickness loss during the annealing process at 400 and 450 °C. Extremely low values of dielectric constant can be obtained at low input power and oxygen flow rate. However, control over the annealing temperature must be gained in order to avoid excessive film matrix collapse with subsequent deterioration of dielectric properties. For the lowest dielectric constant of 1.9, thickness shrinkage of 11% has been detected. Deposition temperature is also found to strongly affect film dielectric constant and chemical composition while input power modulation does not improve the dielectric properties of the films.

Original languageEnglish (US)
Pages (from-to)425-432
Number of pages8
JournalPlasma Processes and Polymers
Volume4
Issue number4
DOIs
StatePublished - May 23 2007

Fingerprint

Dielectric films
Glow discharges
glow discharges
Permittivity
permittivity
Thin films
thin films
Dielectric properties
dielectric properties
Annealing
Oxygen
annealing
oxygen
deterioration
shrinkage
Deterioration
chemical composition
Thermodynamic stability
thermal stability
flow velocity

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Polymers and Plastics

Cite this

Milella, Antonella ; Palumbo, Fabio ; Delattre, James L. ; Fracassi, Francesco ; d'Agostino, Riccardo. / Deposition and characterization of dielectric thin films from allyltrimethylsilane glow discharges. In: Plasma Processes and Polymers. 2007 ; Vol. 4, No. 4. pp. 425-432.
@article{0c334088b6cd44b18f5998bdb91cc58c,
title = "Deposition and characterization of dielectric thin films from allyltrimethylsilane glow discharges",
abstract = "Thin films with a dielectric constant in the range of 1.9-4.5 have been deposited under different experimental conditions from allyltrimethylsilane (ATMS) and oxygen fed glow discharges. The thermal stability of the coatings is evaluated from thickness loss during the annealing process at 400 and 450 °C. Extremely low values of dielectric constant can be obtained at low input power and oxygen flow rate. However, control over the annealing temperature must be gained in order to avoid excessive film matrix collapse with subsequent deterioration of dielectric properties. For the lowest dielectric constant of 1.9, thickness shrinkage of 11{\%} has been detected. Deposition temperature is also found to strongly affect film dielectric constant and chemical composition while input power modulation does not improve the dielectric properties of the films.",
author = "Antonella Milella and Fabio Palumbo and Delattre, {James L.} and Francesco Fracassi and Riccardo d'Agostino",
year = "2007",
month = "5",
day = "23",
doi = "10.1002/ppap.200600186",
language = "English (US)",
volume = "4",
pages = "425--432",
journal = "Plasma Processes and Polymers",
issn = "1612-8850",
publisher = "Wiley-VCH Verlag",
number = "4",

}

Deposition and characterization of dielectric thin films from allyltrimethylsilane glow discharges. / Milella, Antonella; Palumbo, Fabio; Delattre, James L.; Fracassi, Francesco; d'Agostino, Riccardo.

In: Plasma Processes and Polymers, Vol. 4, No. 4, 23.05.2007, p. 425-432.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Deposition and characterization of dielectric thin films from allyltrimethylsilane glow discharges

AU - Milella, Antonella

AU - Palumbo, Fabio

AU - Delattre, James L.

AU - Fracassi, Francesco

AU - d'Agostino, Riccardo

PY - 2007/5/23

Y1 - 2007/5/23

N2 - Thin films with a dielectric constant in the range of 1.9-4.5 have been deposited under different experimental conditions from allyltrimethylsilane (ATMS) and oxygen fed glow discharges. The thermal stability of the coatings is evaluated from thickness loss during the annealing process at 400 and 450 °C. Extremely low values of dielectric constant can be obtained at low input power and oxygen flow rate. However, control over the annealing temperature must be gained in order to avoid excessive film matrix collapse with subsequent deterioration of dielectric properties. For the lowest dielectric constant of 1.9, thickness shrinkage of 11% has been detected. Deposition temperature is also found to strongly affect film dielectric constant and chemical composition while input power modulation does not improve the dielectric properties of the films.

AB - Thin films with a dielectric constant in the range of 1.9-4.5 have been deposited under different experimental conditions from allyltrimethylsilane (ATMS) and oxygen fed glow discharges. The thermal stability of the coatings is evaluated from thickness loss during the annealing process at 400 and 450 °C. Extremely low values of dielectric constant can be obtained at low input power and oxygen flow rate. However, control over the annealing temperature must be gained in order to avoid excessive film matrix collapse with subsequent deterioration of dielectric properties. For the lowest dielectric constant of 1.9, thickness shrinkage of 11% has been detected. Deposition temperature is also found to strongly affect film dielectric constant and chemical composition while input power modulation does not improve the dielectric properties of the films.

UR - http://www.scopus.com/inward/record.url?scp=34250181349&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34250181349&partnerID=8YFLogxK

U2 - 10.1002/ppap.200600186

DO - 10.1002/ppap.200600186

M3 - Article

AN - SCOPUS:34250181349

VL - 4

SP - 425

EP - 432

JO - Plasma Processes and Polymers

JF - Plasma Processes and Polymers

SN - 1612-8850

IS - 4

ER -